U62256AS2C07LLG1

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	256Kb (32K x 8)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	28-SOIC (0.330", 8.38mm Width)
Supplier Device Package:	28-SOP

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U62256AS2C07LLG1 Memory

U62256AS2C07LLG1 is a kind of non-volatile memory. It is widely used in many industries and applications, including consumer electronics, automotive, consumer storage, industrial-grade storage, medical devices, and alternative energy solutions.

Advantages

U62256AS2C07LLG1 memory has several advantages:

• Industry standard non-volatile memory technology
• Highly reliable and accurately reproducible data
• Low power consumption
• Highly efficient write, read, and erase cycles
• Low voltage design
• High reliability and high temperature performance
• Industry standards for easy integration

These advantages make the U62256AS2C07LLG1 memory an attractive option for a wide range of applications.

Application Fields

U62256AS2C07LLG1 memory can be used in a variety of application fields, including:

• Consumer electronics
• Automotive systems
• Consumer storage
• Industrial-grade storage
• Medical devices
• Alternative energy solutions

The U62256AS2C07LLG1 memory is especially suitable for those applications that require reliable data retention even at extreme temperatures or other harsh conditions. The low voltage design makes it feasible for a wide range of applications and its efficient write, read, and erase cycles ensure a high level of reliability.

Working Principle

The U62256AS2C07LLG1 memory is designed to provide reliable and accurate data storage. It works by storing data in a non-volatile memory cell. The data stored in the cell is held even in the event of power loss, providing a reliable way to store critical information. The memory cell used in the U62256AS2C07LLG1 memory is an EEPROM (Electrically Erasable Programmable Read-Only Memory). This type of cell allows data to be electrically programmed and erased. The cell is capable of retaining data even when power is removed, ensuring a high level of reliability. The U62256AS2C07LLG1 memory also features advanced features such as wear leveling, to ensure data integrity and reliability. Wear leveling distributes writes evenly across the memory cells, protecting data from being written or overwritten too often. This feature is especially useful in applications that require reliable data storage. The U62256AS2C07LLG1 memory is also designed with a low voltage design to provide efficient power consumption and a high temperature performance. The low voltage design ensures that the memory can operate at a wide range of temperatures without compromising its performance.

Conclusion

U62256AS2C07LLG1 memory is a reliable and efficient non-volatile memory that can be used in a variety of applications. With its industry-standard technology, high reliability, and low power consumption, it is an attractive option for many applications. It has advanced features such as wear leveling and a low voltage design that make it an excellent choice for reliable data storage.

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