0105-50

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	65V
Frequency - Transition:	100MHz ~ 500MHz
Noise Figure (dB Typ @ f):	--
Gain:	8.5dB ~ 10dB
Power - Max:	140W
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 1A, 5V
Current - Collector (Ic) (Max):	7A
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	55JT
Supplier Device Package:	55JT

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Introduction

The 0105-50 is a two-pole, two-contact RF bipolar junction transistor (BJT) used for power amplifiers applications. It has a high gain linearity, excellent stability, and low noise figure. The high performance and DC characteristics of this device make it suitable for applications up to 50 Watt. This transistor is suitable for high-frequency, applications like the ones where high-gain, high-power, and good linearity are necessary.

Applications

The 0105-50 is designed to meet the requirements of the power amplifier applications, including the amplifying of low-level signals, with high gain and good linearity. The most commonly used applications for this device are power amplifiers for wireless communications, microwave power amplifiers, automotive and cellular amplifiers, RF component amplifiers, direct-conversion receivers, and IF amplifiers.

Receiver Applications

In the receiver applications, this transistor can operate as a low-power amplifier in the input stages, providing a high gain with very low noise. It is used in wireless communications and direct-conversion receivers. It is suitable for use in the high-frequency parts of the radio receiver, providing the ability to detect weak signals with a high signal-to-noise ratio.

Power Amplifier Applications

The 0105-50 is suitable for power amplifier applications, providing high power and high gain with linearity for applications up to 50 Watt. It is used as a power amplifier for automotive and cellular applications, and for RF component amplifiers. This transistor is also used in microwave power amplifiers, providing high gain, low noise and excellent linearity.

Working Principle

The 0105-50 is a two-contact transistor that uses negative feedback to achieve linearization, stability and high gain. The two microscopic NPN and PNP transistors of the device are connected to the two contacts, acting as active elements which provide the signal gain, amplification and linearization of the signal.

Conclusion

The 0105-50 is a high-performance bipolar junction transistor that is suitable for power amplifiers applications, up to 50 Watt. The device has a gain of up to 20 dB and a noise figure of up to 4 dB, providing excellent linearity and stability. The two microscopic NPN and PNP transistors of the device are connected to the two contacts, which are the main active elements of transistor. This device is suitable for use in wireless communications, cellular and automotive applications, microwave power amplifiers and direct-conversion receivers.

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