Allicdata Part #: | 0105-50-ND |
Manufacturer Part#: |
0105-50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 140W 500MHZ 55JT2 |
More Detail: | RF Transistor NPN 65V 7A 100MHz ~ 500MHz 140W Chas... |
DataSheet: | 0105-50 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Frequency - Transition: | 100MHz ~ 500MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 8.5dB ~ 10dB |
Power - Max: | 140W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 1A, 5V |
Current - Collector (Ic) (Max): | 7A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55JT |
Supplier Device Package: | 55JT |
Description
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Introduction
The 0105-50 is a two-pole, two-contact RF bipolar junction transistor (BJT) used for power amplifiers applications. It has a high gain linearity, excellent stability, and low noise figure. The high performance and DC characteristics of this device make it suitable for applications up to 50 Watt. This transistor is suitable for high-frequency, applications like the ones where high-gain, high-power, and good linearity are necessary.Applications
The 0105-50 is designed to meet the requirements of the power amplifier applications, including the amplifying of low-level signals, with high gain and good linearity. The most commonly used applications for this device are power amplifiers for wireless communications, microwave power amplifiers, automotive and cellular amplifiers, RF component amplifiers, direct-conversion receivers, and IF amplifiers.Receiver Applications
In the receiver applications, this transistor can operate as a low-power amplifier in the input stages, providing a high gain with very low noise. It is used in wireless communications and direct-conversion receivers. It is suitable for use in the high-frequency parts of the radio receiver, providing the ability to detect weak signals with a high signal-to-noise ratio.Power Amplifier Applications
The 0105-50 is suitable for power amplifier applications, providing high power and high gain with linearity for applications up to 50 Watt. It is used as a power amplifier for automotive and cellular applications, and for RF component amplifiers. This transistor is also used in microwave power amplifiers, providing high gain, low noise and excellent linearity.Working Principle
The 0105-50 is a two-contact transistor that uses negative feedback to achieve linearization, stability and high gain. The two microscopic NPN and PNP transistors of the device are connected to the two contacts, acting as active elements which provide the signal gain, amplification and linearization of the signal.Conclusion
The 0105-50 is a high-performance bipolar junction transistor that is suitable for power amplifiers applications, up to 50 Watt. The device has a gain of up to 20 dB and a noise figure of up to 4 dB, providing excellent linearity and stability. The two microscopic NPN and PNP transistors of the device are connected to the two contacts, which are the main active elements of transistor. This device is suitable for use in wireless communications, cellular and automotive applications, microwave power amplifiers and direct-conversion receivers.The specific data is subject to PDF, and the above content is for reference
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