Allicdata Part #: | 478-9714-2-ND |
Manufacturer Part#: |
02011JR15ZBSTR |
Price: | $ 0.18 |
Product Category: | Capacitors |
Manufacturer: | AVX Corporation |
Short Description: | CAP THIN FILM 0.15PF 100V 0201 |
More Detail: | 0.15pF Thin Film Capacitor 100V 0201 (0603 Metric) |
DataSheet: | 02011JR15ZBSTR Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
500 +: | $ 0.16038 |
1000 +: | $ 0.13811 |
Series: | Accu-P® |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Capacitance: | 0.15pF |
Tolerance: | ±0.01pF |
Voltage - Rated: | 100V |
Mounting Type: | Surface Mount |
Package / Case: | 0201 (0603 Metric) |
Operating Temperature: | -55°C ~ 125°C |
Features: | RF, High Q, Low Loss |
Size / Dimension: | 0.024" L x 0.013" W (0.60mm x 0.33mm) |
Height - Seated (Max): | 0.011" (0.28mm) |
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Thin Film Capacitors
Thin Film Capacitors are a type of electrical component that is designed to provide efficient energy storage and power distribution. They are constructed using a thin film of silicon dioxide that is deposited on a substrate, usually using a process known as atomic layer deposition (ALD). The deposited film acts as an insulator, preventing electric current from passing through. The capacitance of the device is determined by the thickness of the deposited layer and other properties of the substrate. The resulting device can be used for a variety of different applications, from signal processing to power distribution in large systems.
One example of a thin film capacitor is the 02011JR15ZBSTR. This device is constructed using an ALD process, which ensures a consistent layer of silicon dioxide with uniform thickness throughout the entire film. The capacitance of the capacitor is determined by this thickness, which is set to 0.0001 inches or 0.00254 millimeters. This provides a capacitance rating of roughly 15 microfarads. The device is further optimized with a low temperature coefficient (TC) of only -56 ppm, making it suitable for applications that require a stable capacitance rating over a wide range of temperatures.
The 02011JR15ZBSTR can be used in a variety of different applications. It is primarily designed for AC filtering and noise suppression in Hi-Fi, home theater, and medical equipment. It can also be used for signal conditioning in automotive audio and communications systems, as well as for energy storage in drones, aircraft, and other high power applications. Additionally, it can be used for oscillator timing circuits, regulator output filtering, and energy storage for power supplies.
The working principle of the 02011JR15ZBSTR is based on the concept of capacitive coupling. When an AC voltage is applied to the device, the electrical field generated within the silicon dioxide film causes a redistribution of electrons within this layer. This redistribution creates two polarized layers of charge, with one layer becoming positively charged and the other becoming negatively charged. This creates an electric field between the two layers, allowing current to flow when the voltage is connected. As the voltage is applied, the electrostatic field grows in proportion to the applied voltage, giving the device its capacitive coupling properties.
The 02011JR15ZBSTR is an excellent choice for a variety of applications, thanks to its low TC, high capacitance rating, and robust construction. Its ALD construction ensures a uniform thickness of silicon dioxide, resulting in a highly reliable and consistent device. As such, it is well suited for use in demanding applications, such as signal processing in automotive electronics and energy storage in aircraft and drones.
The specific data is subject to PDF, and the above content is for reference
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