02013J1R3ABSTR Capacitors |
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| Allicdata Part #: | 478-4372-2-ND |
| Manufacturer Part#: |
02013J1R3ABSTR |
| Price: | $ 0.10 |
| Product Category: | Capacitors |
| Manufacturer: | AVX Corporation |
| Short Description: | CAP THIN FILM 1.3PF 25V 0201 |
| More Detail: | 1.3pF Thin Film Capacitor 25V 0201 (0603 Metric) |
| DataSheet: | 02013J1R3ABSTR Datasheet/PDF |
| Quantity: | 1000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 5000 +: | $ 0.08910 |
| Series: | Accu-P® |
| Packaging: | Tape & Reel (TR) |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| Moisture Sensitivity Level (MSL): | -- |
| Capacitance: | 1.3pF |
| Tolerance: | ±0.05pF |
| Voltage - Rated: | 25V |
| Mounting Type: | Surface Mount |
| Package / Case: | 0201 (0603 Metric) |
| Operating Temperature: | -55°C ~ 125°C |
| Features: | RF, High Q, Low Loss |
| Size / Dimension: | 0.024" L x 0.013" W (0.60mm x 0.33mm) |
| Height - Seated (Max): | 0.011" (0.28mm) |
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Thin Film Capacitors are components that work by using the electrostatic charge to create a potential that is used to store energy. They are made up of a dielectric material, usually a thin layer of metal, placed on top of a conducting backplane, usually a few nanometers thick, and separated by a thin oxide layer. The dielectric material is usually a silicon oxide, aluminum oxide or titanium oxide, and the thickness of the dielectric layer is between 5 to 10 nanometers. This type of capacitor is often used in high frequency, high voltage capacitors, and is suitable for use in extreme environment conditions.
A 02013J1R3ABSTR application field and working principle capacitor is a device used to store electrical energy. Its working principle is based on Faraday’s law of induced charge, which states that when a conductor is exposed to a changing magnetic field, a current will flow through it. In the case of the 02013J1R3ABSTR, this current results in the creation of an electric potential between the two sides of the dielectric material, thus storing the electric charge. This charge can then be used to deliver a voltage when needed, allowing for an effective way to store energy.
Thin Film Capacitors are especially useful in high frequency and high voltage applications, due to their very low dielectric losses and low leakage current. They are also capable of working with very fast switching times and have good longevity, making them ideal for high performance designs. An important factor to consider when designing and building a device with a Thin Film Capacitor is the temperature coefficient of capacitance (TCC), which determines how the capacitance of the device changes with temperature. A low TCC ensures high performance over a wide temperature range, while a high TCC can reduce device performance in certain temperature ranges.
The 02013J1R3ABSTR application field and working principlecapacitor is used in a variety of mechanical and electrical applications. These include, but are not limited to, aerospace, automotive, industrial, medical, and networking equipment. Due to their very low dielectric losses and leakage currents, these devices are frequently used for high performance designs. For example, these capacitors can be used in the control systems of automated equipment, as voltage references for high-side switches, or as \'timing capacitors\' in circuits that require precise timing signals.
In conclusion, the 02013J1R3ABSTR application field and working principle thin film capacitor is a device that is capable of storing electrical energy in a very efficient manner. It is often used in high frequency and high voltage applications, due to its low dielectric losses and leakage current and its ability to work with fast switching times. These capacitors are also useful for a variety of mechanical and electronic applications, and can be used as voltage references, timing capacitors, and in automated equipment. With its many features and benefits, the 02013J1R3ABSTR thin film capacitor is an invaluable component for any electronic device.
The specific data is subject to PDF, and the above content is for reference
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02013J1R3ABSTR Datasheet/PDF