02013J1R4ABSTR

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Thin film capacitors are small, efficient electrical components that consist of a thin film of metal oxide, such as aluminum oxide, sandwiched between two electrodes. They are excellent for storing electrical energy and for coupling digital signals between analog circuitry. Thin film capacitors are also well-suited for a variety of applications, including telecommunications, automotive, power electronics, and consumer electronics.

The specific application field of the 02013J1R4ABSTR device is in power electronics, and it was designed as a low-cost capacitor for applications where space is limited or when a capacitor is needed with a higher capacitance than available in regular ceramic or film capacitor construction. The device is non-polarized and can be used in any position.

The overall construction of this device is similar to other thin film capacitors on the market. It consists of two electrode layers, which are made of aluminium, separated by an insulating dielectric layer of Al2O3. This construction gives the device very low equivalent series resistance (ESR), which allows for excellent current handling, high frequency response and low self-heating. In addition, the construction also permits a high current density in a small package.

The 02013J1R4ABSTR device also possesses excellent electrical properties. The maximum rated voltage is 250 volts and the nominal capacitance is 3300 μF. The internal Parasitic Inductance (PIL) is very low, and it has a steep linear voltage-capacitance curve. The ESR of the device is also very low, ensuring that the device can take advantage of high switching possibilities, such as fast switching and high current handling.

The working principle of the 02013J1R4ABSTR device is based on the mechanical storage of electric charge. The two metal electrodes in the device are separated by a dielectric layer, which insulates and prevents leakage of the electric charge. When a voltage is applied, the dielectric layer will be polarized, resulting in electron polarization of the molecules in the dielectric layer. This polarization of the molecules in the dielectric introduces adjacent molecules to the electric field, forming a chain of attractions and repulsions, which stores electric charge.

Once the voltage is removed, the charges will be retained in the capacitor and stored until the application of a new voltage. This process allows the capacitor to store and quickly release electric charge, making it an efficient electrical component for a variety of power electronics applications. It is also very reliable, as the charge retention does not decrease over the life of the capacitor.

In conclusion, the 02013J1R4ABSTR device is an efficient and reliable thin film capacitor suitable for a variety of power electronics applications. Its low ESR and high capacitance allow it to handle high currents and offer a fast switching possibility. The mechanical storage of electric charge in the device is what provides it with its excellent electrical properties, ensuring that it will perform reliably and predictably over its lifetime.

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