02013J1R9ABSTR

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Thin Film Capacitors and 02013J1R9ABSTR Application Field and Working Principle

Thin film capacitors are electric components which are used for their capacitance in a variety of electronic applications. They are used in a variety of settings, from industrial to consumer electronics. A thin film capacitor is typically constructed from a conductive material deposited on glass, ceramic, or plastic substrate material. This material, known as the dielectric, forms a dielectric layer which serves to separate the two conductive electrode layers, creating a capacitor.

The 02013J1R9ABSTR is a popular type of thin film capacitor that is used in various applications. It is made up of a thin film of titanium nitride deposited on an Alumina substrate. The dielectric titanium nitride is deposited in an anisotropic (non-uniform) fashion, with a cross-section showing the material having a variable thickness which increases towards the edges. This offers greater capacitance in the edges compared to the center.

The 02013J1R9ABSTR is a great choice for applications that need to operate at failure-prone high voltages, or at very high frequencies. It is also commonly used in RF circuits because of its superior signal clarity, low signal loss, and good chemical stability. The 02013J1R9ABSTR has an excellent temperature coefficient of capacitance which makes it suitable for applications with extreme temperature fluctuations.

The working principle of a capacitor essentially turns two metals into a miniature power source. When a potential difference is applied across two electrodes, an electric field forms between them. This electric field creates a charge separation on each electrode, which basically turns them into two capacitors connected together.

The working principle of the 02013J1R9ABSTR is similar to that of any other capacitor. One of the main differences is that the dielectric in 02013J1R9ABSTR is deposited in an anisotropic fashion, which makes it capable of handling higher voltages and higher frequency signals compared to other types of capacitors. Since the dielectric is spread unevenly, it has a higher breakdown voltage which means that it is capable of handling more voltage compared to a standard dielectric.

In conclusion, 02013J1R9ABSTR is an excellent choice for applications requiring high performance elements like RF circuits and high voltage circuits. It provides superior signal clarity, low signal loss, and excellent chemical stability. Its anisotropic dielectric layer gives it increased capacitance and higher breakdown voltage, making it a great choice for capacitive applications requiring high voltages and high frequencies.

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