02013J2R4BBSTR\500 Allicdata Electronics
Allicdata Part #:

02013J2R4BBSTR\500-ND

Manufacturer Part#:

02013J2R4BBSTR\500

Price: $ 0.09
Product Category:

Capacitors

Manufacturer: AVX Corporation
Short Description: CAP THIN FILM 2.4PF 25V 0201
More Detail: 2.4pF Thin Film Capacitor 25V 0201 (0603 Metric)
DataSheet: 02013J2R4BBSTR\500 datasheet02013J2R4BBSTR\500 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
5000 +: $ 0.07425
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Series: Accu-P®
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Capacitance: 2.4pF
Tolerance: ±0.1pF
Voltage - Rated: 25V
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Operating Temperature: -55°C ~ 125°C
Features: RF, High Q, Low Loss
Size / Dimension: 0.024" L x 0.013" W (0.60mm x 0.33mm)
Height - Seated (Max): 0.011" (0.28mm)
Description

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Thin film capacitors are widely used in many areas such as industrial electronics, telecom, audio and military applications. The 02013J2R4BBSTR\500 is a popular model in this category. It has a very small size and is particularly suitable for applications with small space requirements. Its use has been extended to a variety of other industries such as high frequency, medical and automotive applications.

The 02013J2R4BBSTR\500 is a ceramic multilayer capacitors (MLCC) and is composed of metal layers separated by a dielectric layer. The metal layers of this model are composed of a conductive material such as gold, silver or palladium which is coated by a dielectric layer made of a ceramic material such as strontium-titanate, yttrium-oxide, titanium-oxide or lithium-tantalate. The dielectric layer has excellent insulation properties and is sufficiently thin to maximize capacitance.

The main feature of the 02013J2R4BBSTR\500 is its outstanding electrical performance. It provides a high capacitance in a small footprint with minimal losses. The robust construction also offers excellent vibration and shock performance, enabling the capacitor to withstand higher temperatures. In addition, the device has a very low ESR (Equivalent Series Resistance) making it suitable for both high-frequency and low-frequency applications. The capacitance of this model is also stable over a wide temperature range, making it suitable for applications where there are varying temperatures.

The 02013J2R4BBSTR\500 is widely used in many applications and is known for its excellent electrical characteristics. It is widely used in industrial and telecommunications applications as well as in military and automotive applications. In industrial applications, it is used to smooth out electrical signals and reduce electrical noise. It is also used in audio applications such as amplifiers, receivers and speakers. In military applications, it is used to protect sensitive electronics from high voltage spikes. In automotive applications, it is used on vehicles to boost start-up performance and improve battery life.

The working principle of the 02013J2R4BBSTR\500 is based on electrostatic field theory. The capacitor stores electrical charge in an electric field which creates a potential difference between two electrodes. When a voltage is applied, this electric field strength varies and additional electrical energy is stored. When the charge on the capacitor changes, the capacitance increases or decreases, resulting in a change in the total energy stored. The capacitor is able to store as much energy as the leading edge of the applied voltage.

In conclusion, the 02013J2R4BBSTR\500 is a small, highly efficient ceramic multilayer capacitor. It has an excellent electrical performance and can withstand high temperatures. It is widely used in a variety of applications such as industrial, telecommunications, military and automotive applications. The working principle is based on electrostatic field theory, where the capacitor stores electrical charge in an electric field which creates a potential difference between two electrodes.

The specific data is subject to PDF, and the above content is for reference

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