
Allicdata Part #: | 0204-125-ND |
Manufacturer Part#: |
0204-125 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 125W 500MHZ 55JT2 |
More Detail: | RF Transistor NPN 60V 16A 225MHz ~ 400MHz 270W Cha... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Frequency - Transition: | 225MHz ~ 400MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 7dB ~ 8.5dB |
Power - Max: | 270W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1A, 5V |
Current - Collector (Ic) (Max): | 16A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55JT |
Supplier Device Package: | 55JT |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The 0204-125 application field and working principle is based on transistors - Bipolar (BJT) - RF technology. This technology is used to amplify signals in different communication and electronic applications. It has made possible the development of high frequency communication systems, faster switching speeds and more efficient power electronic systems.
Characteristics
Bipolar transistors are the predominant type of transistors used in RF technology. They are better for applications which require low noise, high gain, and low power consumption. They operate successfully up to frequencies of about 75 GHz. Bipolar junction transistors have four levels - emitter, base, collector and substrate.
Operation
The 0204-125 application field and working principle involves the following steps. Firstly, the base-emitter junction is forward biased while the collector-base junction is reverse biased. Electrons move from the emitter to the base In the n-type transistor. For a p-type transistor, holes move from the emitter to the base. As the collector-base junction is reverse biased, electrons or holes respectively move away from the collector region.
The resultant current amplification is provided by the collector current dividing the input current. The output signal obtained is much stronger than the input signal. This is the principle on which 0204-125 works.
Applications
The 0204-125 application field covers a wide variety of applications such as amplifiers, oscillators, modulators, low and high power applications, audio amplifiers, switching applications and logic gates. It can also be used in wireless cellular networks, satellite and microwave communications, television and television broadcasting, wireless networking, instrumentation and control systems.
The 0204-125 application field also includes applications in military and defense systems, radar and navigation systems, fiber optics and satellite communication systems, medical and other instrumentation, pagers and GSM networks.
Advantages
This technology has several advantages over conventional transistor technology, such as higher switching speeds, compact size, low bias voltage, wide bandwidth and high gain. This makes it an ideal choice for applications requiring greater performance.
Conclusion
The 0204-125 application field and working principle provides technology which is optimized for a wide range of communication and electronic applications. Its ability to amplify signals at frequencies of up to 75 GHz, coupled with its low noise and power efficiency make it an ideal choice for many applications.
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