0402ZJ120FBWTR

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Thin Film Capacitors are electronic components that are used primarily in electronic devices. They are made of a metal oxide on a polyimide substrate which is then sputtered with a thin film metal electrode. The metal oxide is a dielectric material that acts as an insulator, while the metal electrode serves as a conductor. The electrodes and dielectric materials are capable of providing very high dielectric strength, high frequency operation and low leakage current. The structure of the thin film capacitor consists of an upper layer containing a metal oxide, and a lower layer containing a metal electrode. The metal oxide layer is connected to the metal electrode layer via an insulation, and the metal electrode layer is then connected to an external circuit, typically through a metal connection.

The 0402ZJ120FBWTR is an example of a thin film capacitor. It is a small, low-profile surface-mounting device that has low impedance characteristics, and an operating temperature range of -55°C to +125°C. This type of capacitor is often used in high-speed digital devices such as cell phones, computers and other high-frequency digital equipment. Due to its small size and low impedance, this type of capacitor is ideal for applications requiring high speed transmission, noise suppression and resonant frequencies.

The 0402ZJ120FBWTR has a dielectric of Ta/Nb, which is a high-performance conductor-insulated composite layer that is suitable for high frequency applications. The combination of Ta/Nb has a high dielectric constant and low dielectric losses, making it ideal for fast slew rate applications. The device features a capacitance of 120pF with a capacitance tolerance of ±0.1pF. It also includes a high temperature operating life of up to 1000 hours, a low ESR of 0.001 ohms and a high dielectric strength of up to 7500 volts.

In terms of working principle, the 0402ZJ120FBWTR works as a capacitor. It has two layers, the metal oxide layer and the metal electrode layer, connected through an insulation. When a voltage is applied across the capacitor, current is allowed to flow through the metal electrode and the metal oxide dielectric material will store the charge. This stored charge serves as a source of power for the device, and when the voltage is removed from the capacitor, the stored energy is released back into the circuit.

The 0402ZJ120FBWTR is designed for applications that require high frequency operation and low impedance current. It is commonly used in digital communications and data acquisition systems, as well as for noise suppression and for resonant frequencies in digital circuits. It is also suitable for applications that require high temperature operation and high dielectric strength.

In conclusion, the 0402ZJ120FBWTR is a thin film capacitor that is suitable for high frequency operation and low impedance current applications. It has an operating temperature range of -55°C to +125°C, a capacitance of 120pF and a high dielectric strength of up to 7500 volts. The device utilizes a metal oxide dielectric material and a metal electrode layer that work together to store charge and release it back into the circuit when the voltage is removed. The 0402ZJ120FBWTR is an ideal choice for high speed digital devices, data acquisition systems and for noise suppression in digital circuits.

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