08051J9R1CBTTR

Thin Film Capacitors

Thin film capacitors are constructed with a three-layer structure: an insulating substrate, an active conductor, and dielectric layers. The substrate provides electrical insulation, the conductive layer produces the desired electrical connection, and the dielectric layers form capacitances between the electrodes. The size, shape and material of the elements determine the structure and operating parameters of the capacitor. The size of the essential materials and the dielectric layer are important factors in determining the capacitance and electrical properties of the capacitor.

The 08051J9R1CBTTR application field is a thin film capacitor designed to provide the advantages of low voltage operation and low contact resistance. It has a low contact resistance and a multi-layer structure designed to ensure performance in high frequency applications. It is suitable for applications including power supplies and passenger automobiles. It is built using an optimized combination of an active conductor, a protective insulating layer, and various dielectric layers to achieve superior electrical performance.

The working principle of the 08051J9R1CBTTR device is based on the three-layer construction of a thin film capacitor. The substrate serves as an electrical insulating layer, the conductive layer provides electrical connection, and the dielectric layer creates capacitances between the electrodes. When a voltage is applied across the electrodes of a capacitor, a charge is created across the electrodes and a current flows through the system.

The current flowing through the capacitor is dependent on the capacitance and voltage applied, and as the voltage increases, current increases. The current flow across the capacitor establishes an electric field between the electrodes, and the electric field is proportional to the rate of charge acquired by the capacitor. This electric field induces a voltage between the electrodes which opposes the applied voltage. This voltage is known as the capacitive voltage drop, and the capacitive voltage is given by the formula Vcap= Q/C.

The 08051J9R1CBTTR thin film capacitor is designed with a combination of an active conductor, an insulating layer, and various dielectric layers to achieve superior electrical performance. This device operates in an effective voltage range of 0.3-1.2V and has a contact resistance of less than 2Ω. It can provide capacitance values from 0.12 to 0.28μF, and the frequency range is from 3KHz to 1MHz. It is RoHS compliant and has a temperature range from -40 to 125 °C.

The 08051J9R1CBTTR thin film capacitor is an optimized device for use in various electrical applications, offering superior performance for a wide range of applications including power supplies and passenger automobiles. Its three-layer construction makes it suitable for applications which require a low contact resistance and it is RoHS compliant. The device has a frequency response range from 3KHZ to 1MHZ and a temperature range from -40 to 125 °C. Its optimal combination of active conductor, insulating layer and dielectric layers ensure high performance and are key advantages in its wide range of applications.