08051K8R2BBTTR

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Thin film capacitors are small, compact components that are characterized by their dielectric layers of insulation. The 08051K8R2BBTTR is a type of thin film capacitor that is widely used in today’s electronic applications. This type of capacitor is especially useful in high-temperature, low-noise applications.

The 08051K8R2BBTTR is made of a high-quality, si3n4-based, thick-film ceramic dielectric. This type of ceramic material offers superior electrical and thermal characteristics, and a consistent dielectric constant. The dielectric constant of a 08051K8R2BBTTR is 1.8 per mm of thickness. This is significantly higher than other types of capacitors, which generally have a dielectric constant of 1.4-1.6 per mm. The 08051K8R2BBTTR also possess higher dielectric absorption and breakdown voltage capabilities.

The structure of a 08051K8R2BBTTR is composed of two electrodes, an insulator material and a flexible substrate. The electrodes are usually made of silver-based films, highly conductive metals such as Ni/Cu or Cu/Ni alloys and others. The substrate between the electrodes is made of a variety of materials, such as polyimide, epoxy resin, glass or polyester.

The working principle of a 08051K8R2BBTTR is quite simple. When a voltage is applied across the two electrodes, a dielectric layer is formed between them, resulting in a capacitive effect. This creates a charge separation and an electric field within the dielectric layer. The capacitance of a 08051K8R2BBTTR depends on its size, dielectric constant and thickness.

The 08051K8R2BBTTR is used in many different types of applications, such as signal processing, telecommunication, pressure sensing and power supplies. It is also suitable for use in high-temperature and high-frequency applications, as the dielectric constant remains high even at high temperatures. Additionally, due to its low profile, the 08051K8R2BBTTR is extremely space-efficient, making it an ideal choice for small and compact devices.

In conclusion, the 08051K8R2BBTTR is a type of thin film capacitor that is particularly suitable for high-temperature and low-noise applications. It is made of a high-quality, si3n4-based, thick-film ceramic dielectric, which offers superior electrical and thermal characteristics. The structure of the 08051K8R2BBTTR is composed of two electrodes, an insulator material and a flexible substrate. The working principle is based on the formation of a dielectric layer between the two electrodes and the creation of an electric field within the dielectric layer. And finally, due to its high dielectric constant and low profile, the 08051K8R2BBTTR is used in many different types of electronic applications.

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