Allicdata Part #: | 1035MP-ND |
Manufacturer Part#: |
1035MP |
Price: | $ 79.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 125W 2.5A 55FW1 |
More Detail: | RF Transistor NPN 65V 2.5A 1.025GHz ~ 1.15GHz 125W... |
DataSheet: | 1035MP Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 72.35270 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Frequency - Transition: | 1.025GHz ~ 1.15GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 10dB ~ 10.5dB |
Power - Max: | 125W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 100mA, 5V |
Current - Collector (Ic) (Max): | 2.5A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55FW-1 |
Supplier Device Package: | 55FW-1 |
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The 1035MP Transistors – Bipolar (BJT) – RF technology has a wide range of applications, from commercial to military purposes. This technology has been proven to provide a good balance between size, performance and power consumption. As such, the 1035MP transistors have been widely used in a variety of contexts, most notably for radio frequency (RF) applications.
The 1035MP is a high-performance, high-power RF transistor. It is designed to handle input power of up to 30dBm while providing a high breakdown voltage, high switching speed and low noise output. This transistor is also designed with an integrated ESD protection circuit to protect against electrostatic discharge (ESD) events.
The 1035MP is available in three different terminal configurations: the standard, the flip chip, and the connectorized versions. Each of these has its own advantages, but the flip chip provides a more efficient heat dissipation, thus allowing for higher power gains. In addition, the flip chip version is also much more robust than the other two versions, so it is particularly suitable for use in more demanding applications.
The 1035MP RF transistors work on the same basic principle as all BJT transistors. They are three-terminal devices that operate according to an alternating current (AC) system. The source terminal of the transistor is typically the emitter, and the drain terminal is typically the collector. The third terminal, the base, controls the current flow between the emitter and the collector. The base-emitter bias voltage must be maintained properly in order for the transistor to function properly and provide the desired levels of current conduction.
By varying the currents at the source and drain terminals, it is possible to control the current flow through the transistor. This control can then be used to modulate or amplify signals and produce a variety of effects. The 1035MP RF transistor is used in a wide range of applications, ranging from wireless communications, scanning and guidance systems, medical and industrial instrumentation, to aerospace and defense applications.
The 1035MP Transistors – Bipolar (BJT) – RF technology provides an ideal combination of quality, performance, and affordability. Whether being used for commercial, industrial, or military applications, this technology has proven itself time and time again as a proven and reliable solution.
The specific data is subject to PDF, and the above content is for reference
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