11AA010-I/MS

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	1Kb (128 x 8)
Clock Frequency:	100kHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	Single Wire
Voltage - Supply:	1.8 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package:	8-MSOP
Base Part Number:	11AA010

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Introduction

11AA010-I/MS is a type of nonvolatile memory, which is used for storing large amounts of data on a chip. The 11AA010-I/MS memory is a revolutionary memory storage model that is characterized by high endurance, low latency and fast write speeds. In addition, this type of memory is often used in applications where high reliability and accuracy are required. This memory technology makes it possible to store data with a greater degree of accuracy and reliability than other types of non-volatile memory.

Application Field

The 11AA010-I/MS non-volatile memory is used for a variety of applications, including: • Industrial applications that require data to be stored accurately over time and recalled efficiently• Automotive applications, such as controlling an engine or transmission• Medical applications, such as the storage of diagnostic information• Home automation systems• Security applications, such as access control and biometrics• Embedded systems, such as computer games or smart home gadgets• Portable electronics, such as smart phone and laptop/tablet computers• Data storage applications, such as flash drives, hard drives, and memory cards

Working Principle

The working principle of 11AA010-I/MS non-volatile memory is based on FLASH (Flexible Array of Logic and Storage) architecture. This structure enables the data to be stored in an array of individual cells on the chip. Each cell is composed of several memory storage elements. When data is written to the cell, the elements are set to “1” for a “high” value, or “0” for a “low” value. This type of memory is also known as “mirrored” because a cell is composed of two mirrored halves, one of which always contains the opposite value of the other. When the data is written, the cell is said to be “programmed”. This programming allows the memory cell to retain its stored data, even when power is removed. The cell is erased by inverting the stored values, which returns the cell to its original, “blank” state.

Advantages

The 11AA010-I/MS non-volatile memory has several advantages over other types of non-volatile memory. It has a lower cost per megabyte than other types of non-volatile memory, such as Flash memory, which makes it ideal for applications that require large-scale data storage. The 11AA010-I/MS memory is also distinguished by its high performance, providing fast write speeds and low latencies, as well as high endurance and reliability. In addition, this type of memory is also characterized by its low energy consumption, which is important in battery-operated devices.

Conclusion

The 11AA010-I/MS nonvolatile memory is a reliable and cost-effective memory technology that is used for a variety of applications, from industrial to embedded systems. This type of memory is characterized by a low cost per megabyte, fast write speeds, low latency, high endurance, and high reliability. In addition, this type of memory also has a low energy consumption. With these features, the 11AA010-I/MS non-volatile memory represents an excellent solution for applications that require reliable, accurate and long-term data storage.

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