11AA160T-I/CS16K

The 11AA160T-I/CS16K is a nonvolatile memory component manufactured by NXP Semiconductors. It is available in a small chip package and is an ideal component for a variety of applications.

The 11AA160T-I/CS16K is a serial Electrically Erasable Programmable Read-Only Memory (EEPROM). It has a small footprint and requires less space on the printed circuit board, making it suitable for a variety of applications. This component features a low initial read current, high operating temperature range and fast write time.

The 11AA160T-I/CS16K can be used for various applications such as data storage, data logging, signal processing and system monitoring. It is also suitable for use in industrial, automotive and consumer electronics applications.

The 11AA160T-I/CS16K works on the principle of underlying charge storage technology. Charge storage is a special mode of non-volatile memory technology that stores data bits as charges within a floating gate of MOS transistors. This memory component can store up to 8Kbits of data and each bit can be programmed or erased electrically.

The 11AA160T-I/CS16K has a high-speed serial interface and is accessed using the Serial Peripheral Interface (SPI) protocol. The SPI protocol is a synchronous serial communication protocol which enables the device to exchange data serially with other SPI devices. The SPI protocol is used for data communication between microcontrollers and other components, such as the 11AA160T-I/CS16K.

The 11AA160T-I/CS16K has a wide operating temperature range (-40°C to +85°C) and operates within a voltage range of 2.5V to 5.5V. It also features a low write current (5mA), a low read current (5mA), and a fast write time (3ms). This makes it well suited for use in a variety of applications, including data logging and system monitoring.

In conclusion, the 11AA160T-I/CS16K nonvolatile memory component is available in a small chip package and is an ideal component for a variety of applications, such as data storage, data logging, signal processing and system monitoring. It works on the principle of underlying charge storage technology and has a wide operating temperature range. Additionally, it has a low initial read current, high operating temperature range and fast write time.