12101J1R0CBTTR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Thin film capacitors are an important area of electrical engineering and are used in a wide range of applications. Some examples of the use of thin film capacitors include RF circuits, power-supply circuits, motor drives, and communications systems. 12101J1R0CBTTR is a type of thin film capacitor that is designed to meet specific application requirements and offers superior performance in a variety of applications.

A 12101J1R0CBTTR thin film capacitor is a chip-type capacitor, with a standard maximum working voltage of 2500 V dc or 2192 V rms. It features a dielectric layer consisting of a combination of tantalum-oxide and palladium-oxide, sandwiched between two metal electrodes. This type of capacitor has a high capacitance-to-volume ratio, excellent voltage handling capacity, high stability, and fast transient response. The 12101J1R0CBTTR capacitor is highly stable over wide temperature and voltage ranges, with low losses, and is ideal for use in applications with high power supply and voltage conditions, such as motor-drive circuits, switching power supplies, and high-frequency circuits.

The 12101J1R0CBTTR thin film capacitor has a special feature of a chip-to-package contact system that makes it suitable for use in high voltage, power-supply circuitry. This feature, known as the Electrostripe Contact System, improves the contact and reduces the switch-on resistance of the device. The design and construction of the 12101J1R0CBTTR also ensures a low self-inductance, which reduces noise and electromagnetic interference. The capacitor also offers higher surge currents, and can dissipate large amounts of heat.

The working principle of the 12101J1R0CBTTR thin film capacitor involves the formation of a dielectric layer between two electrodes. When an electric field is applied to the capacitor, an electrical current will travel through the dielectric material and an electrostatic field will be produced. The electrostatic field will cause the electrons to move, resulting in the formation of a capacitive signal. This capacitive signal will allow the 12101J1R0CBTTR capacitor to control, or store, energy in the form of electric fields and store the energy for future use.

The 12101J1R0CBTTR thin film capacitor has a range of advantages, including a high capacitance-to-volume ratio and excellent voltage handling capacity. It also offers a low self-inductance, and is highly stable over wide temperature and voltage ranges. The capacitor is suitable for use in high voltage, power-supply circuits and is resistant to environmental influences. These factors combine to make the 12101J1R0CBTTR capacitor a reliable and efficient device suitable for many applications.

The specific data is subject to PDF, and the above content is for reference