12101K330JBSTR

Thin Film Capacitors

Thin film capacitors are the ideal choice for a range of applications where power stability, long-term reliability, and low equivalent series resistance (ESR) are absolutely essential. These capacitors are suited for use in extreme temperature and/or high vibration environments, making them ideal in a wide range of industries, from automotive and aerospace systems to industrial equipment and medical devices.

The 12101K330JBSTR thin film capacitors are a great example of the thin film technology. These capacitors are designed for use in pulse and high frequency applications, with a usable frequency range from 30MHz up to 1GHz. They feature a 9.2F capacitance value, a 25V maximum operating voltage, and an incredibly low ESR value of only 0.4mΩ.

The advantages of the 12101K330JBSTR thin film capacitors can be attributed to their unique design. They use a two-oxide layer design, consisting of a dielectric layer made of silicon dioxide and a conductive layer made of niobium, which is then separated by an aluminum layer. This design allows them to have a wider range of frequencies and higher capacitance values, as well as heightened mechanical stability and dynamic reliability.

The 12101K330JBSTR thin film capacitors can be used in a variety of applications, including system clocks, digital audio amplifiers, and video signal processing circuits. Their high capacitance and low ESR values make them perfect for smoothing out the voltage ripple of dc power supplies, as well as for reducing the contact bounce of switching devices and eliminating audio noise in audio recording systems. They can also be used for decoupling in analog power supplies, as well as to provide quality power-seeking systems.

In addition, due to their high stability and superior capacitance, these capacitors provide superior surge protection, making them ideal for critical protection of circuits and components. The 12101K330JBSTR thin film capacitors can also be used in DC-DC convertors, high-powered switching converters, and UPS (Uninterruptible Power Supply) systems.

The working principle of the 12101K330JBSTR thin film capacitors is based on the two-oxide layer design. The dielectric layer is made from silicon dioxide, which is an insulating material that can safely store an electric charge. The conductive layer is made of niobium, which is then covered by an aluminum layer that serves as a protective barrier. When a voltage is applied between them, the electrons will move through the niobium layer and across the aluminum protective barrier, creating a charge transfer that allows for the capacitors to efficiently store and release energy.

The 12101K330JBSTR thin film capacitors are high-performance components that are designed for precise and reliable performance in even the most demanding of applications. With their wider range of frequencies, superior capacitance values, and extremely low ESR values, they can be used in practically any application that requires precise power stability and reliability.