12105J8R2BBTTR

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Thin Film Capacitors

Thin film capacitors are devices that offer the ability to react to a change in voltage, current and temperature. They can also be referred to as film FETs, transistors, integrated circuits, and passive components. These components are made using thin-film technology, which is a form of deposition technology where an electrical resistance is applied to a thin substrate and then a dielectric material is added.

The 12105J8R2BBTTR is a type of thin film capacitor. This type of capacitor is made using metal oxide film that acts as the dielectric and metal electrodes. This type of capacitor has low cost, high reliability, and low loss of performance. The main advantages of this type of capacitor are its high capacitance, low ESR and low voltage leakage.

Applications of the 12105J8R2BBTTR Thin Film Capacitor

The 12105J8R2BBTTR is a commonly used type of thin film capacitor and is best suited for applications that require high capacitance, low ESR and low leakage. The 12105J8R2BBTTR is widely used in switching power supply, high-current stable filter power supply and computer power-line decoupling capacitors. It is also used in vertical TV drivers, transmission lines, communication lines and amplifier boards. Additionally, this type of capacitor is widely used in high-frequency oscillator circuits and delay circuits.

Working Principle of the 12105J8R2BBTTR Thin Film Capacitor

The 12105J8R2BBTTR is a type of thin film capacitor with the capacitance being primarily determined by the dielectric between two conductors. When a voltage is applied across two conductors, a current flows between them which forms an electric field. This electric field interacts with the dielectric material which stores energy and creates an electric charge. The greater the electric field and dielectric material, the higher the amount of energy that can be stored.

The 12105J8R2BBTTR is a highly stable type of thin film capacitor due to its double layer electrode and solid layer dielectric. The double layer electrode acts as a conductive barrier and minimizes current leakage, while the solid dielectric material provides higher capacitance and lower ESR. Additionally, the device has low impedance which increases its reliability and improves its performance.

The 12105J8R2BBTTR is well suited for use in power supply and other similar applications due to its high capacitance, low ESR, low leakage and high stability. Additionally, the device is low cost and can be easily manufactured in large quantities, making it a popular choice for many applications.

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