24FC64FT-I/ST

Working Principle

The 24FC64FT-I/ST works on the basic principles of non-volatile F-RAM Memory architecture. It has a 3V F-RAM cell that is able to store data in the same manner as a conventional RAM cell. The continuous power used during the F-RAM\'s operations ensures that the data stored in the F-RAM is not lost even after the power failure. This non-volatility eliminates the need for any kind of refresh operations, thus making the F-RAM much more efficient than other types of non-volatile memories.

The F-RAM memory cell is connected to two access lines: read/write bit line and address line. When an address is applied to the address line, the data stored in the memory cell is accessed via the read/write bit line. The read operation is performed by applying a voltage to the bit line and reading the value stored in the memory cell. The write operation involves applying a voltage to the bit line and writing the new value to the memory cell. The read/write enable signals are used to activate the read/write operations.

The 24FC64FT-I/ST also has an erase function which is used to erase the entire F-RAM cell in order to reset it to the initial state. This operation is performed by applying an erase voltage to the erase line. The erase enable signal is used to activate the erase operation.

It features an internal OTP (One Time Programmable) register which is used to enable/disable the F-RAM. The F-RAM can be disabled by writing the correct OTP value to the internal OTP register. This makes the F-RAM much more secure than other types of non-volatile memories.