25AA080DT-I/SN

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Memory: 25AA080DT-I/SN Application Field and Working Principle

The 25AA080DT-I/SN 8 kilobit Serial Electrically Erasable Programmable Read Only Memory (EEPROM) is a non-volatile memory and is widely used in different application fields, such as electronics, communication, instrumentation and medical devices. Its stable performance and reliable data storage are the main reasons for its wide use. This article will explain the application field and working principle of the 25AA080DT-I/SN, and provide some additional information.

Application Field for the 25AA080DT-I/SN

As previously mentioned, the 25AA080DT-I/SN can be used in a variety of application fields. It is widely used in automotive electronics, where the amount of stored information is limited and the requirement for reliable non-volatile information storage is high. This EEPROM is also used in communication and instrumentation, including data logging and measurement devices. In medical imaging, it has been used in medical CAT scanners, MRIs and ultrasound systems, where reliable data storage is crucial.

The 25AA080DT-I/SN is also used to store and protect critical information in microprocessor systems, thanks to its excellent programming and erasing performance. Furthermore, it is ideal for applications that require low power consumption, as it can remain in a standby state while still maintaining previously stored data. The low power usage makes it suitable for battery powered devices, where the device can be put in a sleep mode when not in use and still maintain the same data.

Working Principle of the 25AA080DT-I/SN

The 25AA080DT-I/SN operates on the principle of storing and retrieving data by applying electrical signals to a ferroelectric memory cell. When a write operation is conducted, an electric charge of a specific voltage is applied to the memory cell, resulting in a polarization of the ferroelectric material. This polarization creates a local magnetic field that stores the data. When a read operation is conducted, an electric field is applied to the memory cell and the polarization of the ferroelectric material causes the electric field to be distorted, resulting in a read signal.

The 25AA080DT-I/SN has a write/erase endurance of 1000 or more cycles, a data retention of 10 years, and an operating temperature range of -40 to 225°F. Its dynamic write/erase operation allows for quick and reliable data storage and retrieval. In addition, the device has been designed to have low power consumption, which includes a low voltage operation voltage of 2.7 to 5.5V when in standby mode.

The 25AA080DT-I/SN can be programmed and erased as a single byte, a page, a sector or a complete chip. It is also capable of continuous read operations and data verification. It can reside into 8K-words with 8 bits each, and its maximum write and read operation time is 10us, allowing high speed read/write operations.

In Conclusion

The 25AA080DT-I/SN 8 kilobit Serial Electrically Erasable Programmable Read Only Memory is an ideal choice for applications requiring reliable data storage and retrieval. It is widely used in automotive, communication and medical imaging, thanks to its stable performance and low power usage. Its working principle is based on the application of electric signals to a ferroelectric memory cell, which is used to store and retrieve data. Its write/erase endurance, data retention and operating temperature range are also excellent. In summary, the 25AA080DT-I/SN is an excellent device for a variety of applications.

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