25AA160AT-I/MS

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The 25AA160AT-I/MS is a 16KB Serial EEPROM memory designed for low-power applications. It is an ideal choice for data storage where fast write performance, low power operation and excellent quality are paramount. It is designed to be used in applications from automotive, industrial, medical and consumer market segments. This article provides an overview of the 25AA160AT-I/MS application field and working principle.

25AA160AT-I/MS finds utility in activities such as data logging, microcontroller configuration and program stores, battery-backed-up memory and small computer programs. The low power consumption of the 25AA160AT-I/MS makes it ideal for battery-backed-up applications. It is especially suited for circuit designs that require low power operation during standby mode. The 25AA160AT-I/MS is designed to have an operating voltage range from 2.5V to 5.5V, making it ideal for low power applications. It also has a wide operating temperature range from -40°C~+85°C, making it suitable for industrial applications.

The 25AA160AT-I/MS features a memory array of 128Kbits (16Kbytes) organized as 2,097,152bits x8 internally. It is fabricated using high-density CMOS technology, providing 10mA typical active current consumption and a maximum standby current consumption of 0.5uA. The device also features page write mode and sequential read mode, making it a fast and reliable solution for data storage applications.

The 25AA160AT-I/MS is available in the standard 8-pin DIP, 8-pin SOIC, 10-pin TSSOP, and 10-pin DFN packages. It is compliant with the standard EEPROM protocol, allowing it to be easily interfaced with microcontrollers, ASICs and FPGAs. The device is also available in an industrial temperature grade. Customers can choose one of the following grades according to their application environment: -industrial grade (-40°C~+85°C), or commercial grade (-20°C~+70°C).

The 25AA160AT-I/MS works according to the charge-transfer principle, where electrons are transferred between two electrodes: the substrate and the oxide. Without an external voltage, one of the electrodes is positively charged while the other is negatively charged, and this charge-transfer state is what is known as the "active" state. When an external voltage is applied to the device, charge is transferred between the electrodes and the information is stored in the form of a positive or negative charge. This process is known as "write", and the charge-transfer principle is used in EEPROMs, DRAMs, MRAMs and Flash memories, among other types of memory.

Thus, the 25AA160AT-I/MS, as a 16KB Serial EEPROM memory, is widely used in many different application fields and is suitable for a variety of applications. With its excellent power efficiency, fast write performance, reliable quality and small size, the 25AA160AT-I/MS is an ideal choice for embedded systems, battery-backed-up memory and microcontroller configurations. Furthermore, the 25AA160AT-I/MS is compliant with the standard Serial EEPROM protocol, making it easy to interface with microcontrollers, ASICs and FPGAs.

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