4306M-101-152LF

Number of Pins:	6
Height - Seated (Max):	0.250" (6.35mm)
Size / Dimension:	0.584" L x 0.085" W (14.83mm x 2.16mm)
Supplier Device Package:	6-SIP
Package / Case:	6-SIP
Mounting Type:	Through Hole
Applications:	--
Operating Temperature:	-55°C ~ 125°C
Temperature Coefficient:	±100ppm/°C
Power Per Element:	250mW
Series:	4300M
Resistor-Ratio-Drift:	50 ppm/°C
Resistor Matching Ratio:	--
Number of Resistors:	5
Tolerance:	±2%
Resistance (Ohms):	1.5k
Circuit Type:	Bussed
Part Status:	Active
Packaging:	Tube

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Introduction

The 4306M-101-152LF is an advanced resistor network designed for low-power, high precision, and low noise applications. It is an array of metal-oxide-semiconductor field effect transistors (MOSFETs) mounted in a single package. It is designed to provide a low-noise, low-power, and high precision solution for applications such as amplifier circuits, digital filters, and high-gain amplifiers.

Application Fields

The 4306M-101-152LF can be used in many different application fields. These include audio amplifier circuits, motor control systems, and low-noise signal generators. This resistor network is also suitable for measurements such as voltage, current, and temperature. Additionally, the 4306M-101-152LF can be used for such applications as cavity filters, digital signal processing, active filter networks, power monitoring, and data communications.

Features

The 4306M-101-152LF has many useful features. It features an onboard capacitor for low-noise power supply, and it can also be configured with variable gain using external resistors. The resistor network also has low profile components, which are suitable for low-height design needs. Additionally, the 4306M-101-152LF features compliant with all European directives on safety, and its components are fully RoHS compliant.

Working Principle

The 4306M-101-152LF is a metal-oxide-semiconductor field effect transistor (MOSFET) array. It is an array of low-power, high accuracy devices that are designed to reduce noise and provide excellent signal to noise ratio (SNR). The 4306M-101-152LF utilizes an MOSFET architecture that allows for a high accuracy solution while providing low noise and low power consumption. This helps to reduce power consumption when the resistor network is implemented in a low-power application.The MOSFET architecture also allows for a wide range of gains with external resistors. This is important for applications such as audio amplifiers, which require a wide range of gain settings. Additionally, the 4306M-101-152LF is designed for low noise operation with an onboard capacitor for low-power supply. This contributes to its low-noise performance and high signal to noise ratio.

Conclusion

The 4306M-101-152LF is an advanced resistor network designed for low-power, high precision, and low noise applications. It is an array of metal-oxide-semiconductor field effect transistors (MOSFETs) mounted in a single package. It is suitable for such applications as audio amplifier circuits, motor control systems, and low-noise signal generators. Additionally, it has features such as low-profile components, low-power supply, and compliant to all European directives on safety. The 4306M-101-152LF utilizes an MOSFET architecture which allows for a wide range of gains with external resistors and low noise operation. This makes the 4306M-101-152LF an ideal solution for applications such as amplifier circuits, digital filters, and high-gain amplifiers.

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