445I35H20M00000

Series:	445
Packaging:	Tape & Reel (TR)
Part Status:	Active
Type:	MHz Crystal
Frequency:	20MHz
Frequency Stability:	±50ppm
Frequency Tolerance:	±30ppm
Load Capacitance:	32pF
ESR (Equivalent Series Resistance):	40 Ohms
Operating Mode:	Fundamental
Operating Temperature:	-40°C ~ 85°C
Ratings:	--
Mounting Type:	Surface Mount
Package / Case:	2-SMD, No Lead
Size / Dimension:	0.197" L x 0.126" W (5.00mm x 3.20mm)
Height - Seated (Max):	0.053" (1.35mm)

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Crystals

Crystals are a form of solid-state matter, characterized by their highly ordered atomic structure, which gives them distinct electrical, optical, and thermal properties that can be harnessed in a wide range of electronic and optical applications. In this article, we will discuss one such crystalline application, the 445I35H20M00000, and its working principle.The 445I35H20M00000 is a thin-film transistor (TFT) made from indium gallium zinc oxide (IGZO) grown on a sapphire substrate. The TFT is a type of field-effect transistor (FET) and can be used in multiple applications such as display drivers for displays, circuits for power electronics and digital logic, as well as for communication circuits. This TFT can be manufactured using thin-film deposition and etching processes and is characterized by its high transparency and low power consumption compared to its silicon counterparts.The main advantage of using the 445I35H20M00000 is its ability to operate at a low temperature range. This is due to its unique crystal structure, which allows its electrons to form a tight bond. The tightly bound electrons create a low power consumption device, with a high switching speed.In terms of the process of TFT fabrication, the first step is to grow the IGZO absorbing layer on a sapphire substrate. This allows for a uniform growth of the thin-film using a semiconductor process. The substrate is then coated with chemically-treated gallium-indium-zinc oxide (GIZO), which provides a suitable material for the fabrication of transistors. Finally, a protective layer of silicon dioxide is formed on top of the GIZO layer to ensure protection from environmental damage and contamination.The process of transistor construction begins with the laying of the patterned electrodes on the wafer. The TFT can either be etched into the substrate or created by a layer transfer process, where the transistor structure is transferred via a thin-film wafer. After the transistor is created, it is tested and characterized to assess its performance, before finally being assembled into its application.In application, the 445I35H20M00000 can be used primarily in digital circuits, where its low power consumption and fast switching speed makes it a highly efficient choice. This performance is key for high-speed circuits and for applications that require microsecond switching times. It also offers excellent reliability for long-term use and is resistant to shock and vibration.Overall, the 445I35H20M00000 is a versatile crystalline application whose characteristics make it an ideal choice for many types of digital applications. Its ability to operate at low temperatures and its low power consumption make it an attractive choice for many applications. In addition, its highly reliable performance ensures long-term use in many demanding environments. With its many advantageous, it is no wonder that the 445I35H20M00000 has become a popular choice among many electronic designers.

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