46007T Allicdata Electronics
Allicdata Part #:

46007T-ND

Manufacturer Part#:

46007T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: RF POWER TRANSISTOR
More Detail: RF Transistor
DataSheet: 46007T datasheet46007T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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Bipolar Junction Transistors (BJTs) are commonly used in RF (Radio Frequency) applications. The 46007T is a high-performance, low-noise, high-speed RF transistor with a maximum output power of up to 40 watts. It is designed for use in a wide range of mobile and fixed wireless applications, such as digital and analog mobile radio, 2.4 GHz Wifi and WiMAX, satellite communications, and public safety radios. The 46007T is available in a variety of packages, including a 4-pin plastic or hermetic header and a 6-pin Through-Hole header.

The working principle of the 46007T is based on the same principles as all BJTs. When a small current flows through the base of the transistor, it allows a larger current to flow from the collector to the emitter. The collector and emitter are physically connected by an NPN or PNP bipolar junction, which controls the current flow between the two regions. The base is connected to the gate in order to control the current flow at the collector-emitter junction. When the base voltage is low, the gate resistor separates the gate from the base, reducing the current flow from the collector to the emitter. When the base voltage is high, the gate resistor lowers, allowing a larger current to flow through the transistor.

The 46007T uses an advanced CMOS structure, consisting of three specialty fabricated layers. The first layer, the substrate, acts as an insulator between the collector, emitter, and gate to control the voltage levels. The second layer, the emitter-collector insulation, acts as a mechanical barrier between the emitter and the collector. The third layer, the gate dielectric, is an electrically insulating layer which separates the gate from the rest of the transistor, providing better control of the voltage and current flow.

The 46007T operates at a maximum power of 40 Watts, making it suitable for high-power applications. It also utilizes thermal management, allowing for operation at temperatures up to 140°C, resulting in improved reliability. The 46007T has a wide frequency range, operating from 700 MHz to 6 GHz, and has an output power up to 28 Watts. To achieve maximum output power it is recommended to use a current source. The transistor also includes a built-in ESD protection for robust operation.

The 46007T is an ideal device for high-power, high-speed RF applications, such as handheld devices, GPS receivers, radio communications systems, Wi-Fi and WiMAX. The device is also well-suited for systems that require small size, high-efficiency and low-cost solution. It is available in a variety of packages, making it easy to integrate into existing hardware.

The specific data is subject to PDF, and the above content is for reference

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