5962F1123501QXA Allicdata Electronics
Allicdata Part #:

5962F1123501QXA-ND

Manufacturer Part#:

5962F1123501QXA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 4M PARALLEL 36CERPAK
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: 5962F1123501QXA datasheet5962F1123501QXA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -55°C ~ 125°C (TA)
Package / Case: 36-CFlatPack
Supplier Device Package: 36-Ceramic FlatPack
Description

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Introduction

5962F1123501QXA is a Nonvolatile Memory (NVM) device which optimizes the design of numerous applications. It is a single chip NVM memory IC with 256 byte electrical erasable programmable read-only memory (EEPROM). This EEPROM device provides a significant split between the EEPROM write function and the EPROM read mode functions that enables the user to control both read and write operations. The device also provides an additional level of write protection, ensuring data integrity and providing maximum security.

Application Fields

5962F1123501QXA devices are used in applications that require non-volatile memory products, such as program memory and parameter storage. Used in a wide range of applications such as industrial, automotive, medical, and networking, it offers various features such as increased performance, low power consumption, and an extended temperature range. This chip can be used for data logging applications as it allows for reliable writing and reading of data without power.

Functionality

The 5962F1123501QXA provides a 16-bit word, 32-bit base memory with a single word write capability and a 1K array write capability, enabling the storage of individual bits. The design implements a 1-bit, 16-bit and 32-bit support for both write and read operations.. Its online tutorial mode makes the user interface easier and gives the user control over all functions necessary to manage the device.

Working Principle

The device utilizes a charge-pump technology which allows it to use the supply voltage to back up the flash memory in the event of a power failure. This is achieved by utilizing a transistor-transistor logic (TTL) driver providing the memory array with a programmable, self-regenerative design resulting in increased storage capacity, fast access times and a low power consumption. The device also utilizes an array of insulated aluminum oxide film which provides a high endurance (cyclic) lifetime and a low non-volatile memory dielectric layer, allowing it to be used in a variety of industrial, medical, and automotive applications.

Conclusion

5962F1123501QXA device is a single-chip nonvolatile memory (NVM) device and provides a significant split between the EEPROM write and the EPROM read mode functions. It is useful in industrial, medical, automotive, and networking applications. This chip utilizes a charge-pump technology which allows it to use the supply voltage to back up the flash memory in the event of a power failure. The device also utilizes an array of insulated aluminum oxide film which provides a high endurance lifetime and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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