
Allicdata Part #: | 5962F1123501QXA-ND |
Manufacturer Part#: |
5962F1123501QXA |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 4M PARALLEL 36CERPAK |
More Detail: | SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 4Mb (512K x 8) |
Clock Frequency: | 83MHz |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 12ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -55°C ~ 125°C (TA) |
Package / Case: | 36-CFlatPack |
Supplier Device Package: | 36-Ceramic FlatPack |
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Introduction
5962F1123501QXA is a Nonvolatile Memory (NVM) device which optimizes the design of numerous applications. It is a single chip NVM memory IC with 256 byte electrical erasable programmable read-only memory (EEPROM). This EEPROM device provides a significant split between the EEPROM write function and the EPROM read mode functions that enables the user to control both read and write operations. The device also provides an additional level of write protection, ensuring data integrity and providing maximum security.
Application Fields
5962F1123501QXA devices are used in applications that require non-volatile memory products, such as program memory and parameter storage. Used in a wide range of applications such as industrial, automotive, medical, and networking, it offers various features such as increased performance, low power consumption, and an extended temperature range. This chip can be used for data logging applications as it allows for reliable writing and reading of data without power.
Functionality
The 5962F1123501QXA provides a 16-bit word, 32-bit base memory with a single word write capability and a 1K array write capability, enabling the storage of individual bits. The design implements a 1-bit, 16-bit and 32-bit support for both write and read operations.. Its online tutorial mode makes the user interface easier and gives the user control over all functions necessary to manage the device.
Working Principle
The device utilizes a charge-pump technology which allows it to use the supply voltage to back up the flash memory in the event of a power failure. This is achieved by utilizing a transistor-transistor logic (TTL) driver providing the memory array with a programmable, self-regenerative design resulting in increased storage capacity, fast access times and a low power consumption. The device also utilizes an array of insulated aluminum oxide film which provides a high endurance (cyclic) lifetime and a low non-volatile memory dielectric layer, allowing it to be used in a variety of industrial, medical, and automotive applications.
Conclusion
5962F1123501QXA device is a single-chip nonvolatile memory (NVM) device and provides a significant split between the EEPROM write and the EPROM read mode functions. It is useful in industrial, medical, automotive, and networking applications. This chip utilizes a charge-pump technology which allows it to use the supply voltage to back up the flash memory in the event of a power failure. The device also utilizes an array of insulated aluminum oxide film which provides a high endurance lifetime and low power consumption.
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