Allicdata Part #: | 60099H-ND |
Manufacturer Part#: |
60099H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF POWER TRANSISTOR |
More Detail: | RF Transistor |
DataSheet: | 60099H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
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Introduction
The 60099H is a bipolar junction transistor (BJT) designed specifically for applications in the radio frequency (RF) range. This transistor is capable of high-speed switching and amplification, allowing it to be used in a variety of different circuits. It is a powerful and reliable device, with a low input capacitance and robust design. In this article, we will discuss the application field of the 60099H and its working principle.
Application Field
The 60099H is a versatile and reliable device, capable of performing a wide range of applications in the RF range. It is designed for use in switching and amplification applications, where speed, accuracy and dependability are crucial. It is particularly suitable for use in applications that require high-speed switching, such as communications and signal processing. It can also be used in circuits that require low noise and distortion, as it has a low input capacitance.
The 60099H is ideal for applications such as radio transmitters and receivers, telecommunications equipment, base station amplifiers and test equipment. It is also used in wireless communication systems, including cellular phones, wireless networks, GPS systems, wireless sensors and DAB systems. The high switching speeds of the 60099H allow for faster communication and higher data rates, making it a vital component for many modern devices and systems.
Working Principle
The 60099H is a bipolar junction transistor (BJT). A BJT consists of two base-collector diodes, connected together in a similar manner to a PN diode. In the 60099H, the base region consists of n-type and p-type materials, separated by a thin region called the “emitter”. This emitter is where current passes through the transistor.
When a reverse voltage is applied to the base-emitter junction, it causes the current to flow through the transistor. This current flow is used to create an amplified output signal, depending on the amount of current. The higher the current, the greater the amplification.
The 60099H has a number of features that make it particularly suitable for RF applications. It has a low input capacitance which is essential for high-speed switching in the RF range. It also has a robust design with excellent thermal stability, making it suitable for use in a variety of environments.
Conclusion
The 60099H is a powerful bipolar junction transistor (BJT) designed for use in applications in the RF range. It is capable of high-speed switching and amplification, and is ideal for use in communications and signal processing applications. It has a number of features that make it particularly suitable for RF applications, such as a low input capacitance, robust design and excellent thermal stability.
The specific data is subject to PDF, and the above content is for reference
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