Allicdata Part #: | 60180-ND |
Manufacturer Part#: |
60180 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF POWER TRANSISTOR |
More Detail: | RF Transistor |
DataSheet: | 60180 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Obsolete |
Description
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Introduction
A transistor is a three-terminal electrically active component used to amplify and switch power. Its usage has been a part of many different devices and electronics systems. Transistors come in several different types and each type has its own advantages and disadvantages. One particular type of transistor, known as the field-effect transistors (FETs), is well suited for RF applications due to its low power consumption and its ability to provide wide bandwidth response with low distortion. The 60180 is a type of FET in this category that excels in RF applications and offers excellent performance in terms of power efficiency, linearity and noise figure.Characteristics
The 60180 is a N-Channel enhancement FET (EFET) and has a current gain of 2 at 20mA and a maximum voltage rating of 34V. It features a low on-state resistance which allows for low voltage operation and high frequency operation. This makes the 60180 suitable for use in RF applications such as TV tuners, low noise amplifiers and frequency synthesisers. The 60180 has a good noise figure and a wide range of operating frequencies from 10MHz to 3GHz. It is also capable of withstanding high voltage and high temperature environments, making it suitable for use in medical, automotive and aerospace applications.Construction
The FET is composed of three layers – source, gate and drain. These layers are separated by gate oxide layers. The source and drain layers consist of two thin metal strips while the gate is covered by a thin layer of polysilicon. The polysilicon gate is positioned between the source and drain and when voltage is applied, it forms an electric field in the surface which modulates the conduction of current through the channel. This modulation of current produces the desired electrical effect.Working Principle
The 60180 EFET functions by modulation of current between the source and the drain using the gate voltage. When a positive gate voltage is applied, it forms an electric field in the surface which increases the current flow between the source and the drain. This, in turn, reduces the voltage drop across the JJT, resulting in an increase in power conversion. Also, the current flow between the source and the drain is controlled by the gate and this modulation of current flow produces an electrical effect.Applications
The 600180 can be used in a variety of applications due to its excellent performance. In RF applications, it is used in TV tuners, low noise amplifiers and frequency synthesisers. It is also used in medical, automotive and aerospace applications due to its ability to withstand high temperature and high voltage environments. Additionally, it can be used in power conditioners, audio amplifiers, and other power applications due to its low power consumption and its ability to provide wide bandwidth response with low distortion.Conclusion
The 60180 is an N-Channel enhancement FET which offers excellent performance in terms of power efficiency, linearity and noise figure. It has a wide range of operating frequencies from 10MHz to 3GHz and its low on-state resistance makes it well suited for RF applications such as TV tuners, low noise amplifiers and frequency synthesizers. The 60180 is also capable of withstanding high temperature and high voltage environments, making it suitable for use in many different applications such as medical, automotive and aerospace applications.The specific data is subject to PDF, and the above content is for reference
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