6116SA35TDB

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The 6116SA35TDB is a memory device that is used and applied in a number of applications. Made by Samsung, this device is a dynamic RAM (DRAM) and is used to store small amounts of information within a designated range of access times. The 6116SA35TDB is composed of two membranes and each is composed of six regions, corresponding with three memory cells, two access transistors and a sense amplifier. It is also composed of a complementary metal-oxide semiconductor (CMOS) field-effect transistor (FET) technology.

The 6116SA35TDB application field typically includes the use of port access memory, static random access memory (SRAM), non-volatile random access memory (NVRAM), flash memory, and other computer memory forms. Generally, this device is most often used in microcontrollers, embedded systems, BIOS applications, and analog-to-digital and digital-to-analog circuits. In addition, the 6116SA35TDB is successfully implemented in other semiconductor devices such as PLDs and ASICs.

The 6116SA35TDB has a data access time of 25ns, which is very fast compared to other DRAM memories. Furthermore, the device has an improved reliability compared to other similar memories and has the advantage of being able to operate at temperatures of up to 70 °C. Furthermore, its voltage usage range of 4.5V to 5V is lower than most other similar memories. It can be used in a variety of applications, ranging from industrial and automotive to networking.

The 6116SA35TDB working principle revolves around a 6-transistor DRAM cell architecture, allowing each DRAM cell to access two bits simultaneously. This architecture reduces power consumption and increases memory access speeds. The device uses a complementary metal-oxide semiconductor (CMOS) field-effect transistor (FET) process, resulting in a uniform cell size. The 6116SA35TDB also works with an asynchronous access time, meaning that data can be accessed as soon as the address is known. This allows for quick retrieval of data without having to wait for the memory to complete an access cycle.

In conclusion, the 6116SA35TDB is a memory device that is employed in a variety of applications, for the purpose of storing small amounts of data that can be quickly accessed. It utilizes a 6-transistor DRAM cell architecture to reduce power consumption and increase memory access speeds. Moreover, the device is improved in terms of reliability and operating temperature, when compared to other similar DRAMs, making it a great choice for a variety of applications.

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