7008S15J

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The 7008S15J is a non-volatile ferroelectric random access memory (FeRAM) component used for embedded system applications. It is an 8K bit device made up of two main components: an integrated circuit (IC) package and the ferroelectric capacitor array. The chip is a low-voltage, low-power device offering high-performance and high-endurance.

Descriptions of 7008S15J

The 7008S15J uses a FeRAM, which is similar to a DRAM, but instead of storing each bit as it does in a DRAM with a magnetic charge, the FeRAM stores each bit as an electric charge. This means that the memory cells in the FeRAM will not lose their charges even after power is removed from the device. This makes the 7008S15J an ideal choice for use in applications where data needs to be retained when power is lost, such as in computers or industrial equipment.

Features of 7008S15J

The 7008S15J offers a wide range of features, including a low operating voltage of 2.7V, a wide operating temperature range of -40°C to 85°C, and high-speed programming and reading capabilities of up to 80MHz. The chip also offers a write protect pin, which prevents writing to specific memory locations. Additionally, the device has an endurance and data retention of up to 1 million write cycles and 10 years of data retention, respectively.

Application Fields of 7008S15J

The 7008S15J is suitable for a variety of embedded system applications, including consumer electronics, automotive and aerospace, as well as industrial, medical and military applications. It can be used as part of a system-on-chip, memory mapping device or as a stand-alone memory device. It is also suitable for use in portable and battery-powered applications.

Working Principle of 7008S15J

The 7008S15J’s working principle is based on the ferroelectric process. A ferroelectric capacitor is a type of capacitor with a ferroelectric material such as barium titanate or lead zirconate titanate. The ferroelectric capacitor works by polarization reversal, which is when the electrons in the material are aligned so that there is an electric field present, either in a positive or negative direction. The direction of the electric field is then used to represent the binary 1 or 0 of each bit stored in memory.

When the voltage is applied across the capacitor, the electrons move in order to cause a polarization of the entire material. As the voltage is switched, the polarization changes direction and the bit is reversed in value. This process is then repeated as needed to write, store and read data to and from memory.

Conclusion

The 7008S15J is a non-volatile ferroelectric random access memory device that is ideal for use in embedded systems applications. It offers a variety of features and benefits, including a low operating voltage, wide operating temperature range and high-speed programming and read capabilities. Additionally, it can be used for a variety of applications including consumer electronics, automotive and aerospace, as well as industrial, medical and military applications. Finally, its workings are based on the ferroelectric process of polarization reversal.

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