7015L12PF Allicdata Electronics
Allicdata Part #:

7015L12PF-ND

Manufacturer Part#:

7015L12PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 72K PARALLEL 80TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 72Kb (8K ...
DataSheet: 7015L12PF datasheet7015L12PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 72Kb (8K x 9)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)
Base Part Number: IDT7015
Description

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7015L12PF Application Field and Working Principle

The 7015L12PF is a DRAM DRAM (Dynamic Random Access Memory) module. It is a type of integrated circuit that stores and retrieves data, allowing computer systems to quickly access large amounts of data without needing to consult storage devices such as hard drives. This memory product utilizes such architectures as the ECC (Error Correction Code), onboard temperature sensors and improved power-saving features to ensure a higher level of data integrity and power management.

Application Field

7015L12PF is widely used in industrial automation, gaming machines, medical equipment, digital home, digital signage, telecommunication, surveillance systems, automotive and other embedded systems. With the rapid development of technology, more and more embedded systems are equipped with memory in their design to meet the high speed, large capacity and low power consumption needs. 7015L12PF is precisely a choice for helping such systems.

Working Principle

The 7015L12PF DRAM module works on a principle known as Dynamic Access Memory (DRAM). This type of memory is a type of RAM (Random Access Memory) that allows direct access to random locations in the memory array. RAM requires an electric field to store data, and the electric field must be maintained constantly; that is, the power consumption is higher than that of static RAM (SRAM). When a cell address is accessed, the memory value at that address is either read or written. The main advantages of DRAMs are their high capacity, high speed, and low cost per bit.

7015L12PF is based on the latest DDR4 standard and optimizes the components and design to achieve excellent performance without sacrificing low power consumption. The module has a maximum memory bandwidth of up to 37.5 GB/s and is rated to support up to 2400 MT/s data transfer rate under a 1.2 V supply. The integrated thermal sensors help the system controller monitor the module’s case temperature. This ensures that the system both runs cool and reliable.

7015L12PF also employs an industry standard error correction code (ECC) to detect and correct any single-bit memory failures that occasionally occur. With error correction code (ECC), system reliability and data integrity is significantly improved. This is especially important for mission critical applications, where data is extremely valuable.

In addition, 7015L12PF also integrates advanced power-saving features, such as Partial Array Self Refresh (PASR) and deep power-down mode. Both features help reduce power consumption significantly, thereby increasing the overall system’s energy efficiency.

Conclusion

In conclusion, the 7015L12PF is an ideal choice for various embedded applications due to its high capacity, high speed and low power consumption. With the integration of advanced features such as ECC, on-board temperature sensors, and power-saving technologies, this memory module provides a reliable and energy efficient performance.

The specific data is subject to PDF, and the above content is for reference

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