7015L25J8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	72Kb (8K x 9)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	68-LCC (J-Lead)
Supplier Device Package:	68-PLCC (24.21x24.21)
Base Part Number:	IDT7015

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Introduction to 7015L25J8

The 7015L25J8 is a high-speed, low-noise, and low-power DRAM memory component. It\'s suitable for a wide range of applications, including automotive, consumer, and industrial computing applications. This component employs both a static column-address buffer and a static row-address buffer, which together provide users with optimal performance while reducing power consumption.Design Features of the 7015L25J8

The 7015L25J8 is designed with several key features that make it ideal for a variety of applications. These features include:

• 8 Gb capacity – enough for almost any modern application or device
• Low power design – allows for efficient storage and operation
• Low noise and low latency – faster data access and transfer
• High-quality error correction mechanisms – greater reliability and data integrity
• High-speed signaling – fast data transfer rates

Application Fields and Working Principle of the 7015L25J8

The 7015L25J8 can be used in a wide range of applications, including automotive, consumer, and industrial computing. It\'s designed to work at high speed and with low power consumption while still providing reliable data integrity. The use of a static column-address buffer and a static row-address buffer makes it especially suited for high-speed operations.The working principle of the 7015L25J8 follows the principles of dynamic random access memory (DRAM). That is, it includes a series of memory cells which are organized into rows and columns. A controller manages each row and column and controls access to the memory cells. When the processor sends a request to access the DRAM, the controller locates the requested row and column, and the data is transferred from or to the cells.In order to allow for optimum performance and power savings, the 7015L25J8 includes an array of static column-address buffers and static row-address buffers. These provide individual access to columns and rows, eliminating the need to wait for other requests to finish before accessing a given row or column. This allows for faster data access times and reduced power consumption. Furthermore, the static buffers also help reduce the amount of noise that is generated during data operations.Conclusion

The 7015L25J8 is a high-speed, low-noise, and low-power DRAM memory component that is suitable for a wide range of applications, including automotive, consumer, and industrial computing. Its combination of static column-address buffers and static row-address buffers makes it ideal for high-speed operation, low power requirements, and reduced noise. With these design features, the 7015L25J8 is an ideal choice for any application involving DRAM memory.

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