7015S15PF Allicdata Electronics
Allicdata Part #:

7015S15PF-ND

Manufacturer Part#:

7015S15PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 72K PARALLEL 80TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 72Kb (8K ...
DataSheet: 7015S15PF datasheet7015S15PF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 72Kb (8K x 9)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)
Base Part Number: IDT7015
Description

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Memory devices are electronic components that are used for storage and retrieval of information. Memory devices are among the most important components in a wide range of electronic circuits and systems. They are used in many applications, including digital signal processing and control systems. Memory devices are generally characterized by the types of application fields and the principles upon which they operated.

7015S15PF: Application Field and Working Principle

The 7015S15PF is a high-speed 8KB (8192-byte) CMOS Static RAM. It is a very versatile memory device, used in a variety of different application systems. As with all memory devices, the 7015S15PF has three basic components: a memory array, a row address decoder, and a column address decoder. This device has a commercial temperature range from 0°C to 70°C.

The 7015S15PF memory array consists of 32-bit words stored in 512 rows and 16 columns. Each row can contain up to 8192 bytes of data. Its column address decoder is designed with low capacitance, high-speed MOS transistors to decode the address and select the column of memory within the row. Its row address decoder uses CMOS inverters and MOS transistors to decode the address of the row needed to be accessed.

The device\'s access time is 10ns (with data), and it features an asynchronous architecture which allows the device to be clocked asynchronously. The device also features low standby current, which allows it to consume much less power when not in use or when idle. This makes it suitable for battery-powered applications. Furthermore, the device is compatible with bus-oriented memory architectures like SIMM (Single In-Line Memory Module) and DIMM (Dual In-Line Memory Module) for personal computer memory upgrades.

The 7015S15PF\'s working principle is based on a chip enable pin that can be used to enable and disable the memory. When the chip enable is active, the memory array will be accessed. The row address is decoded first and followed by the column address. The row and column addresses are latched before being decoded. Once decoded, the data is accessed and output to the data bus. The output data is then stored on the data bus until the next access command is issued.

The 7015S15PF is designed for a wide range of applications. Its low power consumption and fast access time makes it ideal for use in embedded systems and in mobile devices. Its compatibility with different memory architectures makes it a great choice for personal computer memory upgrades. It can also be used in telecommunications, industrial, and automotive applications.

The 7015S15PF memory device has many advantages, making it an excellent choice for many different types of applications. Its low power consumption and fast access time make it suitable for a variety of applications. Its compatibility with different memory architectures makes it an excellent choice for personal computer memory upgrades. Its commercial temperature range makes it suitable for use in a variety of environments. Finally, its robust design ensures long-term reliability in demanding applications.

The specific data is subject to PDF, and the above content is for reference

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