7015S15PF8/E Allicdata Electronics
Allicdata Part #:

7015S15PF8/E-ND

Manufacturer Part#:

7015S15PF8/E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 72K PARALLEL 80TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 72Kb (8K ...
DataSheet: 7015S15PF8/E datasheet7015S15PF8/E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 72Kb (8K x 9)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)
Description

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Memory: 7015S15PF8/E Application Field and Working Principle

7015S15PF8/E is an important type of Dynamic Random Access Memory (DRAM). It is popularly used in many applications due to its fast storage of data and low power consumption properties. DRAM are integrated circuit chips that are primarily used as memory storage devices. DRAM primarily stores binary data in a two-dimensional array of transistors, capacitors or other components. 7015S15PF8/E stores information during a certain period of time; hence, it can be referred as “volatile” memory.

7015S15PF8/E Application Field includes but not limited to:

  • In-vehicle management system of Intelligent cars
  • Instrumentation, industrial control systems
  • Home appliances
  • Consumer electronics

7015S15PF8/E Working Principle:

In order to explain 7015S15PF8/E working principle, let’s focus on the DRAM structure and access method. It is composed of multiple components, consisting of capacitance and transistors. The transistors’ states representing logical 0s and 1s, and the logical values are stored in the capacitors.

Unlike SRAM, DRAM does not have a traditional data latch like transistor. It stores data in capacitors, which are based on capacitive terms. To read the information form memory, it is necessary to apply the opposite voltage from the capacitor to stimulate the charging process. In order to facilitate the reading and storing process, it is required to refresh the capacitor during the steady state.

Since refreshing 7015S15PF8/E memory cells is a must in order to keep data present, the memory is prone to power supply voltage fluctuations, compromising the device’s operating performance. It is therefore important to use the latest DRAM die or DRAM substrates that ensure data accuracy and stability under certain voltage conditions. 7015S15PF8/E is one such substrate designed to protect against such scenarios.

7015S15PF8/E is designed to increase light load efficiency and reduce peak current consumption, as well as improve system stability and reliability. Its operating temperature range is between -40 to +85℃, which makes it suitable for a wide range of consumer and industrial applications, and it also features a wide voltage range from 1.71V to 3.6V. It works well with Intel processors, making it especially desirable for overclocking and gaming enthusiasts.

In summary, 7015S15PF8/E is a versatile and modern type of DRAM suitable for many applications. It is integrated with advanced features for protecting the data stored in memory cells, such as wide voltage ranges, operating temperature range and protection against power supply voltage fluctuations. In addition, it is also suitable for overclocking and gaming applications, while providing a fast and efficient storage of data.

The specific data is subject to PDF, and the above content is for reference

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