| Allicdata Part #: | 7015S25PF8-ND |
| Manufacturer Part#: |
7015S25PF8 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | IDT, Integrated Device Technology Inc |
| Short Description: | IC SRAM 72K PARALLEL 80TQFP |
| More Detail: | SRAM - Dual Port, Asynchronous Memory IC 72Kb (8K ... |
| DataSheet: | 7015S25PF8 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Dual Port, Asynchronous |
| Memory Size: | 72Kb (8K x 9) |
| Write Cycle Time - Word, Page: | 25ns |
| Access Time: | 25ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 4.5 V ~ 5.5 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 80-LQFP |
| Supplier Device Package: | 80-TQFP (14x14) |
| Base Part Number: | IDT7015 |
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Memory refers to the hardware component used to store information and instructions on an electronic device that can be accessed quickly. The 7015S25PF8 is a memory component used in the telecommunications and computing industries. This article will discuss the application field and working principle of 7015S25PF8.
7015S25PF8 is a type of static random-access memory (SRAM), which is used as a system memory. SRAM is a type of non-volatile memory used in microcontrollers and similar types of computing devices. 7015S25PF8 is a 9-transistor SRAM cell that is used to store single bit of data. It is a 25nm CMOS SRAM device, which is designed to be used in multiple voltage ranges.
The 7015S25PF8 is used in a wide variety of applications, including telecommunications systems, embedded systems, storage solutions, and logic gate arrays. It is most commonly used in digital systems for storing data that needs to be accessed quickly, such as signal processing and network management systems. Additionally, it is also used as a cache memory for CPU-based systems.
The working principle of 7015S25PF8 depends on its structure. The SRAM cell consists of six transistors, which are connected in a cross-coupled manner. The transistors are connected in such a way that they form a flip-flop, which is a type of memory cell. This flip-flop is used to store a single bit of data. When a bit is written to the cell, the flip-flop will remain in the same state until it is flipped by an external signal.
When a read or write operation is performed on the 7015S25PF8, it uses a four-phase clock signal. The first phase of the clock signal is a set up phase, in which the memory cell is configured. The second and third phases of the clock signal are used to write data to the cell, while the fourth and fifth phases are used to read data from the cell. The last phase is a write-back phase, and it is used to write the data that was read from the cell back to the memory.
The 7015S25PF8 is a versatile memory component and is used in a wide range of applications. It is an efficient and reliable way to store and access data quickly, making it an ideal choice for digital systems. Additionally, because it is an SRAM, it is non-volatile, making it an even more useful memory component.
The specific data is subject to PDF, and the above content is for reference
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7015S25PF8 Datasheet/PDF