7025S45J8 Allicdata Electronics
Allicdata Part #:

7025S45J8-ND

Manufacturer Part#:

7025S45J8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 128K PARALLEL 84PLCC
More Detail: SRAM - Dual Port, Asynchronous Memory IC 128Kb (8K...
DataSheet: 7025S45J8 datasheet7025S45J8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)
Base Part Number: IDT7025
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memories are essential for the way humans process information. From the moment we are born, our brains use memories to store and access information more easily. With advances in technology, memories have evolved to become incredibly sophisticated and powerful, while becoming more energy-efficient and less expensive.

The 7025S45J8 is a type of semiconductor memory product with an advanced memory technology called static random access memory (SRAM). SRAM is a type of integrated circuit used to store digital information in an electronic device. The 7025S45J8 is an integrated circuit optimized for power, features and cost. It combines 1.7V voltage operation and fast access times while offering low power consumption and reducing the surface area of the memory chip.

In terms of its application fields, the 7025S45J8 is mainly used in consumer electronics. High performance CPUs and GPUs, gaming consoles, 6G/5G networks, cars, smartphones, and a range of other applications can benefit from using this type of memory. It quickly adapts to all memory requirements and offers advantages like low power use, fast reads and writes, improved endurance, and industry-leading features.

As for its working principle, the 7025S45J8 is an SRAM chip that uses a simple circuit with four transistors and three resistors. It stores multiple bit values in different memory cells which are spread in the array. Each memory cell is made up of latch type flip-flop to store data bit. The input is connected to two inverters and the output is connected to two cross-coupled inverters, creating a loop circuit.

In a 7025S45J8, data can be written to a single cell by applying high (‘1’) or low (‘0’) voltage to the data inputs of the flip-flop. To read the data from the cell, it is required to sense the data from the flip-flops output. To that end, the sense amplifier is used to sense the data of memory cells based on the current value. The bit values can be accessed in a single clock cycle in order to speed up memory operations.

In addition, the 7025S45J8 also supports advanced features like burst mode, page mode, and output enable. Burst mode allows multiple words of data to be transferred in a single access cycle. Page mode helps in reducing the cycle time with multiple accesses to the memory cells in the current page. Output enable pins are also provided to allow multiple words of data to be read from different banks of the chip.

To conclude, the 7025S45J8 is an advanced memory chip that is used in a wide range of consumer electronics. It operates on 1.7V low voltage and offers advantages like fast read and write speeds, low power consumption, improved endurance, and easy scalability. Additionally, its four transistor/ three resistor SRAM circuit works on the basis of bit values stored in separate memory cells, which can be accessed using the sense amplifier in a single clock cycle. Furthermore, its advanced features like burst mode, page mode, and output enable can help in boosting the performance even further.

The specific data is subject to PDF, and the above content is for reference

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