7025S45PF8 Allicdata Electronics
Allicdata Part #:

7025S45PF8-ND

Manufacturer Part#:

7025S45PF8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 128K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 128Kb (8K...
DataSheet: 7025S45PF8 datasheet7025S45PF8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT7025
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential part of computer systems that enables data to be stored and later retrieved. 7025S45PF8 is a type of memory that solves the need for reliable, high-speed storage and retrieval of data. 7025S45PF8 has several different application fields and is used in a wide variety of devices and systems, including consumer electronics, mobile devices, large-scale consumer and industrial electronics, and military applications.

7025S45PF8 is a non-volatile, low-power memory solution that offers a wide range of performance benefits. It is based on the NAND flash memory technology and is capable of storing up to 8 terabytes of data. It is a high-density solution that allows for fast read and write speeds and can accommodate a wide range of applications. Its low power consumption makes it ideal for consumer electronics, mobile devices, and industrial applications.

7025S45PF8\'s working principle is based on Electron Tunneling. Electron tunneling is a process where electrons cross barriers that would typically prevent the passage of the electrons. This allows for the electrons to pass through the barrier with no loss of energy or speed. The electrons then tunnel through the crystalline lattice of a substrate and create a current. This current is then used to store and read data.

The working principle of 7025S45PF8 memory also makes it ideal for use in automotive and military applications. Due to the nature of the technology, the 7025S45PF8 memory is highly reliable, has low power requirements, and is robust in extreme temperatures. Additionally, the memory can be used in a wide range of temperatures and environmental conditions.

In addition to the many application fields that 7025S45PF8 is suited for, its working principle makes it a safe and reliable solution for data retrieval and storage. The working principle has enabled the memory to store and retrieve data quickly and reliably in numerous applications. Furthermore, the memory has been designed to be energy efficient and highly compatible with many different systems.

The 7025S45PF8 memory is the perfect solution for any application that requires high-speed storage and retrieval of data. Its excellent performance and wide range of use makes it ideal for consumer electronics, mobile devices, industrial systems, and military applications. Additionally, its working principle makes it an excellent choice for reliable, long-term data storage and retrieval.

The specific data is subject to PDF, and the above content is for reference

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