7054S20PRF8 Allicdata Electronics
Allicdata Part #:

7054S20PRF8-ND

Manufacturer Part#:

7054S20PRF8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 32K PARALLEL 128TQFP
More Detail: SRAM - Quad Port, Asynchronous Memory IC 32Kb (4K ...
DataSheet: 7054S20PRF8 datasheet7054S20PRF8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)
Base Part Number: IDT7054
Description

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This paper will discuss the application field and working principle of 7054S20PRF8 Memory. 7054S20PRF8 Memory, also known as a type of radiation-hardened static RAM, is a type of non-volatile RAM which is mainly used in aerospace engineering and military applications. Its working principle is that data is stored in the form of a pulse coded memory cell which is able to retain its data even when the power is turned off.

7054S20PRF8 Memory is suitable for applications which require long-term data storage and extremely reliable performance. It is particularly suitable for military and aerospace applications because it is resistant to the effects of radiation. It is also used in the defense and telecommunication industry where it is often used as a backup memory in case of power failure. In addition, 7054S20PRF8 Memory is also used in medical and automotive applications.

The working principle of 7054S20PRF8 Memory is based on a binary storage cell in which data is stored as a series of pulses. The memory cell is designed to prevent the loss of data when the power is disconnected. To ensure data storage, the memory cell contains a tiny capacitor which is charged when power is applied. The capacitor then discharges to store the data. The amount of time the data can remain stored on the capacitor depends on the size of the capacitor which is used in the memory cell.

In order to read and write data, the memory cell requires an electronic circuit. The circuit consists of a sense amplifier and a comparator which are responsible for measuring the voltage level on the capacitor. The voltage level is then compared to a predetermined threshold and the data is either read or written to the memory cell.7054S20PRF8 Memory is used in several industries and is highly reliable due to its radiation-hardened design. It is also easy to use and can be used in a wide range of applications, making it an ideal choice for a variety of situations. With its reliable performance, 7054S20PRF8 Memory is one of the most popular types of memory used in industrial, medical and military applications.

The specific data is subject to PDF, and the above content is for reference

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