70V3399S166BC8 Allicdata Electronics
Allicdata Part #:

70V3399S166BC8-ND

Manufacturer Part#:

70V3399S166BC8

Price: $ 54.22
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 2M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 2Mb (128K ...
DataSheet: 70V3399S166BC8 datasheet70V3399S166BC8 Datasheet/PDF
Quantity: 1000
1000 +: $ 49.28710
Stock 1000Can Ship Immediately
$ 54.22
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT70V3399
Supplier Device Package: 256-CABGA (17x17)
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15 V ~ 3.45 V
Memory Interface: Parallel
Access Time: 3.6ns
Series: --
Clock Frequency: 166MHz
Memory Size: 2Mb (128K x 18)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Memory

The 70V3399S166BC8 is a PSRAM (pseudo static random access memory), which is a type of memory that combines the best characteristics of static and dynamic RAM (SRAM and DRAM respectively). It helps provide faster access times than the traditional DRAM, along with not having the low-energy requirements of SRAM.

The application fields of this particular PSRAM would be that of general computing, particularly server banking systems, its uses are varied, ranging from providing larger storage space to providing better performance through faster read-write cycles. This type of PSRAM is suitable for use in a wide array of devices, ranging from embedded systems[1] such as cell phones or routers to large-scale data centres or other specialized stores large amounts of data.

The working principle behind the 70V3399S166BC8 can be broken down into the following processes.

Read and Write Operations

This particular type of PSRAM performs both read and write operations in a slightly different manner than DRAM. DRAM works on refresh cycles, meaning that its entire memory array needs to be read multiple times in a given interval. PSRAM, on the other hand, requires a system to power up parts of the memory array in order to access its data. To do so, the PSRAM accesses the array sequentially section-by-section instead of reading the entire array. This process is known as page-mode

Page mode

Page mode is an access technique used by PSRAMs to reduce memory access times. It reduces the amount of time it takes to access the memory by only accessing a part of the memory array, instead of accessing the entire array. This allows the PSRAM to read or write data much faster than a conventional DRAM, as it only needs to power up and access a small part of the memory array, instead of the entire array.

Write Protect

The 70V3399S166BC8 also supports write-protect capabilities. This allows the user to prevent certain parts of the PSRAM from being modified or erased. This additional level of control is beneficial in cases where certain data needs to remain unchanged for long periods of time.

Conclusion

The 70V3399S166BC8 is a specialized form of memory suitable for a wide variety of applications ranging from general computing to specialized data centres. It offers faster access times than DRAM, while also offering write-protect and page-mode capabilities, allowing the user to control how they access the data stored in the memory.

The specific data is subject to PDF, and the above content is for reference

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