71016S12YG Allicdata Electronics
Allicdata Part #:

800-2442-5-ND

Manufacturer Part#:

71016S12YG

Price: $ 1.76
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: 71016S12YG datasheet71016S12YG Datasheet/PDF
Quantity: 23
1 +: $ 1.60020
10 +: $ 1.44144
Stock 23Can Ship Immediately
$ 1.76
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Base Part Number: IDT71016
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

71016S12YG Memory Application Field and Working Principle

71016S12YG is a type of dynamic random access memory (DRAM) technology designed for use in modern computing and mobile devices. It is a type of high-speed memory that is used to supplement the main memory in a computer system.

The 71016S12YG technology is designed to provide greater memory storage capacity while reducing power consumption and increasing data access speeds. The technology offers a high-speed capability of up to 2.4GHz and an on-die read latency of just 6ns.

Application Fields:

71016S12YG DRAM is specifically designed for applications that require high memory capacities. It is suitable for high-end computing and data-intensive mobile devices, such as laptops and mobile phones. In addition, it is also suitable for embedded and Industrial markets like industrial control and automation.

Working Principle:

The working principle behind 71016S12YG DRAM is that data is stored in a special type of electrical capacitor. This capacitor is capable of holding a charge for a few milliseconds and therefore can be used to store data. In order to “refresh” the memory, the charge must be refreshed regularly by the memory controller, hence the name “Dynamic RAM”.

The memory controller constantly monitors the charge of the capacitors and, when the memory is accessed, the controller supplies the appropriate voltage to the capacitors. This charge is then used to read and write data from and to the memory chip. As the memory is refreshed, data stored inside the memory is constantly updated and therefore, remains valid.

Advantages:

71016S12YG DRAM offers many advantages over traditional DRAM technologies. It provides a faster read and write speed, higher storage capacity and improved power efficiency. Furthermore, the technology also offers greater stability and reliability compared to other DRAM technologies.

71016S12YG DRAM is a versatile technology that can be used in a variety of computing and mobile devices. It can be used to improve overall system performance, or to increase the storage capacity of devices such as laptops and mobile phones.

Conclusion:

71016S12YG DRAM technology is an important advancement in DRAM technology. It provides higher speeds, higher storage capacity and improved power efficiency. Additionally, it offers greater reliability and stability compared to other DRAM technologies.

The specific data is subject to PDF, and the above content is for reference

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