71321LA20TFG Allicdata Electronics
Allicdata Part #:

71321LA20TFG-ND

Manufacturer Part#:

71321LA20TFG

Price: $ 12.33
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 64TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 16Kb (2K ...
DataSheet: 71321LA20TFG datasheet71321LA20TFG Datasheet/PDF
Quantity: 1000
40 +: $ 11.20550
Stock 1000Can Ship Immediately
$ 12.33
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)
Base Part Number: IDT71321
Description

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Memory is an essential part of a computer’s architecture, and plays an important role in modern computing. It is responsible for storing data and instructions as well as retrieving and executing them. As such, memory is crucial for the functioning of our computers. In this article, we will discuss the application field and working principle of 71321LA20TFG.

71321LA20TFG is a type of static random access memory (SRAM) chip which is widely used in embedded systems and digital signal processing (DSP) applications such as cell phones, global positioning systems (GPSs), and other computer peripherals. It is manufactured using submicron CMOS technology, and utilizes a variety of innovative design techniques such as cross-coupled sense amplifier technology, high-speed bus management, and tri-state output buses. This makes it one of the most advanced and efficient SRAM chips available in the market.

The 71321LA20TFG SRAM chip works on the principle of storing and retrieving data using a combination of electrical connections and a unique cell structure. A single SRAM cell consists of four transistors and six resistors. Each SRAM cell stores a single bit of data, which can be either a 1 or a 0. This data is held in the cell until the cell is either reset or written to. The transistor-resistor combination is used to store the data—when the power is on, the transistors will either be in a conducting state (1) or a non-conducting state (0).

One of the main advantages of this SRAM chip is its low power consumption. The chip is designed in such a way that it can operate at very low power levels, thus saving energy. The chip also has a high speed access time, meaning that the data can be written and read quickly. In addition, the chip has a high memory density and can store large amounts of data per unit of area. This benefit allows manufacturers to reduce the overall size of the device.

These features make the 71321LA20TFG a suitable choice for embedded systems and digital signal processing applications. It is also ideal for systems requiring high performance and reliability. The chip can operate in harsh environment conditions, and can even withstand high voltage transients and noise. In addition, the chip is designed to allow for easy replacement and upgrade in order to keep up with the increasingly faster speeds required by modern applications.

In conclusion, the 71321LA20TFG SRAM chip is a reliable and efficient memory chip which is suitable for diverse applications. It is low power consuming, offers high speed access time, has a high memory density, and is designed to endure harsh environments. Furthermore, the chip is easy to upgrade and replace, making it an ideal choice for embedded systems and digital signal processing applications.

The specific data is subject to PDF, and the above content is for reference

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