7132LA100J

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	16Kb (2K x 8)
Write Cycle Time - Word, Page:	100ns
Access Time:	100ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	52-LCC (J-Lead)
Supplier Device Package:	52-PLCC (19.13x19.13)
Base Part Number:	IDT7132

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The 7132LA100J is a type of non-volatile, high-density and low-power memory stored in an integrated circuit. Its primary application field and working principle will be explored further in this report.

Application

The 7132LA100J is primarily used for embedded industrial control applications and consumer electronics. It provides extensive features for applications such as industrial automation and energy management. It is designed for high-performance embedded systems, allowing for rapid and reliable transfer of data.In addition, the 7132LA100J can be used for embedded automotive electronics. It is ideal for automotive systems such as connective displays, navigation systems, and diagnostic control units. Furthermore, it is capable of supporting functions such as event signaling, alarm monitoring, and engine control.The 7132LA100J has also been used in medical devices and imaging equipment. It is capable of providing reliable, high-speed data transfer during scanning and imaging processes. This makes it highly suitable for medical diagnostic devices and other medical equipment.

Working Principle

The 7132LA100J is based on NOR-type Flash memory. This type of memory is capable of performing write, read and erase operations on cells, which are relatively small charge-storage units. Cells are organized into blocks, which can be erased en masse. Data is then written or read from each cell in the blocks. When writing to the memory, the application code sends a command to the cell. This command specifies the data that is to be written. The voltage level of the cell is then increased to around 12V, causing an avalanche breakdown, which in turn causes the electrons to permanently trap material onto the cell. The 7132LA100J also uses ECC (Error Correction Codes) to improve reliability and accuracy of data in the memory. An ECC algorithm is used to detect and correct any errors that occur during data reading. This makes the data generated by the 7132LA100J more reliable.

Conclusion

The 7132LA100J is a type of high-density and low-power memory chip well-suited for a variety of applications. It is used in embedded industrial control applications, consumer electronics, automotive applications, and medical equipment. Its working principle is based on NOR-type Flash memory with the cells are organized into blocks that can be written, read and erased. Error correction codes are also used to improve accuracy and reliability of the data.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description