Allicdata Part #: | 72V283L6PF8-ND |
Manufacturer Part#: |
72V283L6PF8 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC FIFO 32768X18 6NS 80QFP |
More Detail: | N/A |
DataSheet: | 72V283L6PF8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Bus Directional: | Uni-Directional |
Base Part Number: | 72V283 |
Supplier Device Package: | 80-TQFP (14x14) |
Package / Case: | 80-LQFP |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C |
FWFT Support: | Yes |
Retransmit Capability: | Yes |
Programmable Flags Support: | Yes |
Expansion Type: | Depth, Width |
Series: | 72V |
Current - Supply (Max): | 35mA |
Voltage - Supply: | 3.15V ~ 3.45V |
Access Time: | 4ns |
Data Rate: | 166MHz |
Function: | Synchronous |
Memory Size: | 576K (32K x 18)(64K x 9) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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72V283L6PF8 Application Field and Working Principle
The 72V283L6PF8 is a 4K x 36 bits dynamic random access memory (DRAM) for logic and FIFO applications. It offers the highest performance and effectiveness for memory intensive systems, allowing up to 4Kx 36 bits of data and fast read and write time. It has many features like fast page mode and a programmable latency that make it an ideal choice for high-performance applications.
Features:
- High-speed DRAM—Fast page mode speed
- On-die driver—Reduces power requirements
- Fast write-prepare time
- DDR2 protocol supported
- 4Kx36-bit Fixed Memory
- Synchronous and asynchronous read and write
- Low power
- Error correction code (ECC)
- Embedded hardware error correction
- High-density packaging
Application Field:
The 72V283L6PF8 is an ideal high-performance DRAM for applications that require fast read and write operations. It is suitable for traditional embedded designs, including data acquisition devices and meter parameter logging. In addition, it is also ideal for personal digital assistant (PDA), cellular phone, computer graphics devices, ATM machines, and surveillance systems.
Working Principle:
The 72V283L6PF8 utilizes a high-speed page mode read and write architecture. It provides simultaneous access to four words of 36 bits each at a time. The device supports multiplexed read and write operations, allowing fast read and write speeds. It also supports error correction codes (ECC) and on-die driver circuitry for decreased power consumption. In addition, the 72V283L6PF8 uses an advanced DDR2 protocol for additional data integrity and to support frequency scaling capabilities.
The integrated array circuitry provides data transfer with minimal latency and maximum speed. The 72V283L6PF8 also features a programmable latency value so it can be configured to meet the particular needs of the system. In addition, the device supports write-prepare time that can be configured to reach the desired level of performance. The device also has an embedded error correction system (ECC) to detect and correct errors in read and write operations.
The 72V283L6PF8 is the highest-performance DRAM device for FIFO applications. It can be used for fast read and write operations, without the need for frequent refreshing. Its on-die driver and built-in ECC ensure reliable data integrity. The device\'s high-density packaging, combined with its low power consumption and programmable latency, make it the ideal choice for memory-intensive systems.
The specific data is subject to PDF, and the above content is for reference
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