76020H

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76020H Application Field and Working Principle

The 76020H is a bipolar field effect transistor (BJT) RF transistor intended for high performance Class A, B, and C operations. It offers outstanding performance for use in broadcast and industrial applications from DC to 120 MHz. The 76020H features a minimum of 20 dB gain over a wide dynamic range with excellent phase control.

Applications

The 76020H is suitable for applications including high-efficiency amplifiers, modulators, and noise suppression, as well as Class A, B, and C amplifiers and oscillators. Its domed shape, enhanced by extended-contact construction, offers the high-power reliability associated with field effect transistors.

The main advantages of the 76020H device are a higher breakdown voltage and a lower noise figure. This is beneficial when building linear amplifiers operating at higher rf frequencies. Operation up to 120 MHz also allows the device to be used in applications that require higher rf frequencies. The device can also perform pulse modulation duty cycles due to its small RF lobe size.

Working Principle

The working principle of the 76020H RF transistor is based on the bipolar field effect principle, with a single N-type and a single P-type layer with an integrated gate that helps connect the two layers. The field effect of the gate determines the on/off state of the transistor, making it possible to modify the current flow between the two layers.

The current flow through the transistor is determined by the resistance between the two layers, as well as the voltage applied to the gate. The higher the gate voltage, the lower the resistance between the layers and the higher the current flow. This means that the transistor can be switched between an ON (high current) and an OFF (low current) state using a signal applied to the gate.

Features

The 76020H is a highly reliable field effect transistor designed for use in a wide variety of RF applications. It offers a wide dynamic range with excellent phase control, a high input/output impedance ratio, and high efficiency. In addition to its stability and high dynamic range, the device also offers its users advanced protection from electromechanical and environmental stress. These features make the 76020H a highly desirable device for use in a multitude of applications.

The 76020H has been designed with a special domed shape, which helps to enhance its reliability and provide a higher frequency output. The device also features a dielectric thermal device which helps to minimize thermal impedance as well as providing protection against excessive thermal shock. The 76020H is an efficient and reliable transistor for use in various broadcast and industrial applications.

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