Allicdata Part #: | 86303065NLF-ND |
Manufacturer Part#: |
86303065NLF |
Price: | $ 2.87 |
Product Category: | Connectors, Interconnects |
Manufacturer: | Amphenol FCI |
Short Description: | RCT POWER CONTACT 16 |
More Detail: | Socket Contact Gold Solder Cup 16 AWG Power |
DataSheet: | 86303065NLF Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
500 +: | $ 2.60719 |
Series: | 86303 |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Power |
Pin or Socket: | Socket |
Contact Termination: | Solder Cup |
Wire Gauge: | 16 AWG |
Contact Material: | -- |
Contact Finish: | Gold |
Contact Finish Thickness: | 15.0µin (0.38µm) |
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86303065NLF application field and working principle can be classified as “Contacts - Multi Purpose”.
86303065NLF is acronym of Nanolaminated Field Effect Transistor. The structure of 86303065NLF consists of four thin layers: the source and drain layers, each has a double gate electrode and one semiconductor layer. Due to its small size, which is approximately one hundredth of the size of a normal transistor, the 86303065NLF has several advantages.
86303065NLF can be used in many application fields. A few of the most common application fields are: radio frequency (RF) applications, digital signal processing (DSP) applications, analog signal processing (ASP) applications, and microwave applications. The electric characteristics of the 86303065NLF is very suitable for the signal processing applications because of its low turn-on voltage, low input capacitance, and high switching speed.
In addition, because of its nanometer scale size, 86303065NLF also has some superconductor properties. This is mainly because of the electrostatic forces between the gates and semiconductor layers. This allows them to work with higher speeds than a normal FET and gives them better performance in high-frequency applications.
The working principle of 86303065NLF is essentially the same as that of a normal transistor. The two gates of the FET are connected to the source and drain electrodes. When a voltage is applied across the source and drain electrodes, the gate-source voltage (VGS) will cause an electric charge to be induced between the gates and semiconductor layers. This will cause a current to flow between the source and drain electrodes.
The main difference between the 86303065NLF and a normal transistor is the gate-source voltage (VGS). In the case of the 86303065NLF, the VGS is much lower than that of a normal transistor, which enables it to operate at higher speeds.
By utilizing its nanosized structure, its low turn-on voltage, its high switching speed, and its superconducting properties, the 86303065NLF can be used in many applications, such as RF and microwave applications, digital signal processing, analog signal processing, and many other fields. It is an ideal choice for those who need to implement high-performance solutions in a compact form factor.
The specific data is subject to PDF, and the above content is for reference
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86303922A | Amphenol FCI | 0.0 $ | 1000 | DSUB PLASTIC HOOD POTING2... |
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