APSDM064GQ2WN-ETM1

Series:	SDM5A-M 7P/90D MP2
Part Status:	Active
Lead Free Status / RoHS Status:	--
Memory Size:	64GB
Memory Type:	FLASH - NAND (MLC)
Form Factor:	Disk-On-Module, SATA DOM
Speed - Read:	245MB/s
Speed - Write:	75MB/s
Voltage - Supply:	5V
Type:	SATA III
Current - Max:	205mA
Operating Temperature:	0°C ~ 70°C
Size / Dimension:	52.25mm x 24.00mm x 15.20mm

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Introduction

Solid State Drives (SSDs) are a type of non-volatile storage that is becoming increasingly popular due to their speed, reliability, and energy efficiency compared to traditional hard disk drives. APSDM064GQ2WN-ETM1 is a specific type of SSD that is designed for high-performance applications. This article will discuss the application field and working principle of the APSDM064GQ2WN-ETM1 SSD.

Application Field

The APSDM064GQ2WN-ETM1 is designed for applications that require high-performance storage and high data rates. This makes it ideal for applications such as data analysis, data mining, and artificial intelligence. It is also suitable for graphics-intensive gaming, and for applications in the medical, military, and automotive sectors.

Working Principle

The APSDM064GQ2WN-ETM1 uses a combination of NAND flash technology and TLC (Triple Level Cell) technology to achieve high speed and reliability. NAND flash technology uses memory cells that are electrically programmable and erasable, meaning that data can be written and read quickly. TLC technology provides further speed improvements by using three bits per cell, instead of the two bits used by traditional memory technologies. The APSDM064GQ2WN-ETM1 supports on-chip error correction code (ECC) to ensure data integrity. The ECC circuitry monitors incoming and outgoing data, and corrects any errors that may occur during transmission. The APSDM064GQ2WN-ETM1 also supports RAID-like data striping, which stripes data across multiple drives in order to increase the available storage capacity.

Conclusion

The APSDM064GQ2WN-ETM1 is a high-performance SSD designed for applications that require fast storage. It makes use of NAND flash and TLC technologies to achieve fast performance, and supports on-chip error correction and RAID-level data striping for data integrity and increased capacity.

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