AT-30511-TR1G

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AT-30511-TR1G RF Bipolar Transistor
The AT-30511-TR1G is a RF bipolar transistor characterized by good linearity and low noise performance, making it ideal for a wide range of high frequency amplification applications.
Features
  
Frequency range: DC to 500MHz
  
Gain: 11.5dB
  
UIS of 0.7V
  
Output power: 1.5W
  
Power supply: 5V
  
Operating temperature range: -40°C to +100°C
Applications
The AT-30511-TR1G RF bipolar transistor is suitable for a range of high frequency amplification applications including radio broadcast receivers, radio and TV antenna amplifiers, base station power amplifiers, and satellite communication systems.
Working Principle
A bipolar transistor is a type of electronic semiconductor device composed of three terminals: the emitter, the collector, and the base. This type of device is composed of two distinct semiconductor pieces, with charges injected from the emitter allowing carriers to flow in either direction.
The transistor works on the principle of the current gain it provides. When a current is applied to the base, it creates a voltage drop across the transistor, thus allowing a current to flow in between the collector and the emitter. This current gain, also known as the Beta, is determined by the base current the transistor is subjected to.
The AT-30511-TR1G RF bipolar transistor is designed for use in high frequency applications where high gain and low noise are desired. The uniform current gain and high current capacity of the transistor allow for consistent high gain at higher frequencies, providing excellent linearity and low noise performance for applications such as radio broadcast receivers.
Conclusion
The AT-30511-TR1G RF bipolar transistor is ideal for high frequency amplification applications requiring good linearity and low noise performance. The uniform current gain, high current capacity, and excellent linearity and low noise performance make it suitable for a wide range of high frequency applications.

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