AT-30533-TR2G

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AT-30533-TR2G is a RF Transistors - Bipolar (BJT) device. This component is packed in an enhanced SOT-343 package, that provides higher current capacity for optimal thermal performance and is designed for wireless communication applications such as Wi-Fi, Bluetooth and ISM bands. It offers better performance than the standard offerings for RF transistors. This component is suitable for the applications of low-frequency circuits and high-frequency communication systems.

AT-30533-TR2G is an NPN-type transistor with a low noise figure and high gain, making it a great choice for applications requiring high gain, low noise and good linearity. Its maximum power dissipation rating of 500mW also makes it suitable for high-voltage and high-power RF applications. Furthermore, it has low input capacitance and low output capacitance, which allows it to reject frequency-selective disturbances, making it an ideal device for low-frequency applications.

The transistor has an operating frequency range from 30-3000MHz. It supports up to 40Vdc collector current, making it suitable for a wide range of applications. Additionally, it has a wide temperature range from -40°C to +125°C, which is beneficial when operating in extreme temperatures.

AT-30533-TR2G is a three-terminal single-stage RF transistor and it has been designed specifically for high-power applications. It can be used as a base driver in medium-power applications and is also suitable for low-frequency oscillators, amplifiers and mixers. Its maximum power gain and stability can be obtained at 3-30MHz with a collector current up to 10mA. Its typical collector current is 400mA, which makes it ideal for high power applications.

The working principle of the AT-30533-TR2G RF Transistors - Bipolar (BJT) is based on the NPN transistor technology. This is a three-terminal device, which consists of a base, a collector and an emitter. The base is biased to a voltage through a current-limiting resistor, which controls the flow of the current from the collector to the emitter. The current from the collector to the emitter is proportional to the voltage across the base-emitter junction. This voltage is calculated using the equation VBE = VCE – VEB. This voltage change creates an amplified signal, which is then passed on to the output of the transistor.

In addition, the collector to emitter capacitance of the AT-30533-TR2G is very low and it provides low-noise performance due to its high gain. It also has high isolation between the input signals and the output signals. This makes it suitable for both low- and high-frequency applications. Furthermore, its current gain is high, which provides low-distortion performance. It also has low switch-on and switch-off times, making it suitable for fast switching applications.

The AT-30533-TR2G transistor is suitable for a wide range of applications, such as low-frequency circuits, high-frequency communication systems and high-power RF applications. It is a high-performance RF device and is suitable for applications that require a high-performance RF solution. Furthermore, it has a wide range of operating temperature, making it an ideal choice for applications in extreme temperature conditions.

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