AT-31011-TR2G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5.5V
Frequency - Transition:	--
Noise Figure (dB Typ @ f):	0.9dB ~ 1.2dB @ 900MHz
Gain:	11dB ~ 13dB
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 1mA, 2.7V
Current - Collector (Ic) (Max):	16mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143

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AT-31011-TR2G is an advanced transistor technology widely used in radio frequency (RF) applications. It is a Gallium Arsenide bipole transistor with a very high frequency performance. The AT-31011-TR2G is designed specifically for high frequency applications due to its low noise characteristics.The AT-31011-TR2G has a number of advantages over conventional bipole transistors. The major advantages of the AT-31011-TR2G are higher power output, lower power dissipation and a wide operating frequency range. It is also able to provide a wide range of signal gain for applications that require a high degree of linearity.The AT-31011-TR2G is an epitaxial nitride bipole transistor with an operating frequency range of 28 GHz. The device has a 25 mA current rating and can be operated up to 35 V. The transistor features a high signal capacity of 3 Watts at 1.2 GHz and 6 Watts at 28 GHz. It has a very high voltage gain of 20 dB at 3GHz. It has a minimum third order intercept point of 8 GHz.The AT-31011-TR2G is manufactured with a GaAs substrate and a silicon layer. The epitaxial nitride layer provides a number of benefits such as a low resistance path, high thermal stability and high gain. The device is suitable for use in high frequency applications such as amplifiers, RF switches, RF power amplifiers and filters.The AT-31011-TR2G is available in a surface mount package and is primarily used in RF applications. It can be used in a range of applications such as in high frequency amplifiers for mobile communications, tracking radar systems, satellite communications, wireless local area networks and other wireless communication systems.The working principle of AT-31011-TR2G is based on the operation of bipolar junction transistors. In a bipolar junction transistor, the current flows between two diodes, which form two p-n junctions. The two currents, when combined, form a current gain. The gain depends on the length of the n-type region as well as the magnitude of the bias. The AT-31011-TR2G is designed so that the current gain remains high over the entire operating frequency range.The AT-31011-TR2G has a number of advantages over other bipolar transistors. It is a high frequency amplifier with a low noise figure, high dynamic range, and high linearity. The device also has a high power output, low power dissipation, wide operational frequency range, and high signal capacity. The AT-31011-TR2G is an ideal choice for high frequency applications such as radar systems, satellite communications, wireless local area networks and other wireless communication systems.

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