Allicdata Part #: | AT-32011-BLKG-ND |
Manufacturer Part#: |
AT-32011-BLKG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | TRANS NPN BIPO 5.5V 32MA SOT-143 |
More Detail: | RF Transistor NPN 5.5V 32mA 200mW Surface Mount S... |
DataSheet: | AT-32011-BLKG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 5.5V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | 1dB ~ 1.3dB @ 900MHz |
Gain: | 12.5dB ~ 14dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 2mA, 2.7V |
Current - Collector (Ic) (Max): | 32mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143 |
Base Part Number: | AT32011 |
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Bipolar junction transistors are widely used in many different types of applications, including radio-frequency (RF) applications. One of the most common RF bipolar junction transistors is the AT-32011-BLKG, developed by Taiwan-based manufacturer Advanced Technology Solutions (ATS). It is a NPN RF transistor that can be used in a variety of high-frequency applications, such as RF amplifiers and oscillators.
The AT-32011-BLKG is a low-noise, high-gain, medium-power NPN silicon transistor, designed specifically for high-frequency applications. It is rated with a maximum collector-emitter voltage of 30V, a maximum collector current of 250mA, and a maximum power dissipation of 500mW. It has an ft (transition frequency) of 70MHz, making it an ideal choice for amplifying or oscillating signals in the VHF or UHF ranges.
The key feature of the AT-32011-BLKG is its low-noise performance. It has an excellent noise figure of just 2.5dB at 500MHz, which is a very good figure for a transistor of its size. This makes it highly suitable for a range of applications, including communications, radar, and medical electronics.
The AT-32011-BLKG is a fairly easy transistor to use. It is relatively easy to drive, with low-drive currents of up to 2mA. It can also be connected in either an active or passive mode, with the active mode offering the best noise performance.
The working principle of the AT-32011-BLKG is based on the basic principles of a bipolar junction transistor (BJT). In a BJT, current flows between the emitter and the collector, while voltage is applied to the base. The amount of current that flows through the transistor is proportional to the base-emitter voltage, which in turn is dependent on the amount of current flowing through the collector.
In the case of the AT-32011-BLKG, the transistor is designed to have a relatively wide bandwidth. This means that it can amplify or oscillate signals over a wide range of frequencies. It also has a low operating temperature, which makes it highly suitable for use in RF applications.
The AT-32011-BLKG is a versatile, reliable and cost-effective transistor, with excellent noise performance, making it ideal for a wide range of applications. It is particularly well-suited for use in high-frequency RF systems, such as communications, radar and medical electronics, due to its low-noise characteristics and wide bandwidth.
The specific data is subject to PDF, and the above content is for reference
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