AT-32011-TR1G Allicdata Electronics
Allicdata Part #:

516-1564-2-ND

Manufacturer Part#:

AT-32011-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: IC TRANS NPN BIPOLAR SOT-143
More Detail: RF Transistor NPN 5.5V 32mA 200mW Surface Mount S...
DataSheet: AT-32011-TR1G datasheetAT-32011-TR1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: --
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 12.5dB ~ 14dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143
Base Part Number: AT32011
Description

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The AT-32011-TR1G is a silicon bipolar RF transistor from the AT-32011 Series. This device has many applications such as low noise amplifiers, medium power amplifiers, and high efficiency frequency multipliers. It is suitable for use in circuits operating up to an operating frequency of 2GHz and a dual-gate frequency of 4GHz. The device is housed in a three pin package, and provides a variety of features including low source-drain capacitance and current gain.

The AT-32011-TR1G transistor is a dual-gate NPN transistor. This means that it has two control gates, an emitter and a collector. The emitter and the collector are connected to the two control gates of the device and act as the input and output terminals, respectively. The two control gates are responsible for controlling the current flow through the transistor. The input gate acts as the base of the transistor and the output gate acts as the collector. The current gain of the AT-32011-TR1G transistor is typically rated at 11 dB.

The AT-32011-TR1G transistor is designed for use in applications such as low noise amplifiers, medium power amplifiers and high efficiency frequency multipliers. Its low source-drain capacitance and high current gain make it well suited for these applications. The device is constructed out of a high-quality silicon and has an excellent power handling capability of 5 Watts. This makes it ideal for a variety of applications where high power transistors are needed.

The AT-32011-TR1G also has a built-in depletion mode bipolar transistor. This device is used in a number of applications where the device needs to be turned off or on without the need for an external power supply. This feature makes the device well suited for applications such as switching operations, logic circuits, and RF circuits. The device also has a large breakdown voltage of 25 Volts, which makes it suitable for a wide range of applications.

The AT-32011-TR1G device is designed to operate at a high frequency and has an operating frequency range of up to 2GHz. This makes it an ideal device for many high-frequency applications such as frequency multipliers and low noise amplifiers. The device also provides excellent stability and noise figure characteristics, making it suitable for many applications where low noise is necessary.

The AT-32011-TR1G device has a low power consumption, allowing it to be used in a wide range of applications requiring high efficiency. It is also reliable, making it suitable for use in a variety of systems operating in both the commercial and industrial sectors. This device is also RoHS compliant, making it safe for use in any environment.

The specific data is subject to PDF, and the above content is for reference

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