AT-32033-BLKG Allicdata Electronics
Allicdata Part #:

AT-32033-BLKG-ND

Manufacturer Part#:

AT-32033-BLKG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: TRANS NPN BIPO 5.5V 32MA SOT-23
More Detail: RF Transistor NPN 5.5V 32mA 200mW Surface Mount S...
DataSheet: AT-32033-BLKG datasheetAT-32033-BLKG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: --
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 11dB ~ 12.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: AT32033
Description

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The AT-32033-BLKG (hereafter referred to as the AT-32033-BLKG for the sake of conciseness) is a type of bipolar junction transistor (BJT) characterized as a radio frequency (RF) transistor. These types of BJTs are commonly used for amplification and switching in most RF applications, such as RF communications, radar, and satellite systems. The AT-32033-BLKG has several advantages compared to other similar BJT models, including a low noise figure and maximum operating frequency, making them well suited for use in high frequency signal applications.

The AT-32033-BLKG is designed to operate in the 25-200 MHz frequency range and can reach maximum frequency scenarios of up to 400MHz depending on the type of application. The AT-32033-BLKG also offers a high impedance input at high frequencies, enabling it to be used for even most sensitive applications. Additionally, the AT-32033-BLKG BJT models are highly stable and reliable as they are mainly composed of a combination of silicon, germanium, and aluminum.

At its most basic level, the working principle behind the AT-32033-BLKG is the same as that of any BJT. It has an emitter region, a base region where the current carriers are collected, and a collector region which generates output current. The emitter is the negative terminal where electrons are emitted, while the collector is the positive terminal that collects electrons. The BJT amplifies current when a voltage is applied to its base terminal. This voltage increases the number of electrons in the base region, which then attract more electrons from the emitter region.

This amplification of current flows from the emitter to the collector can be further increased by biasing the collector-base region of the BJT. With the collector reverse biased, this increases the effective capacitance between the collector and base terminals of the BJT, resulting in a higher current gain. The current gain is an important factor as it determines how strong of a signal can be amplified or processed by the AT-32033-BLKG.

The AT-32033-BLKG operates at a higher frequency because of its high-speed switch characteristics. It features low-distortion in the output voltage which is beneficial for frequency-sensitive applications. Additionally, it also has a low-noise figure, which means that it is not easily influenced by disturbances or disturbances occurring in the environment in which it is operating. While providing a steady and reliable current gain, the AT-32033-BLKG also offers good voltage-handling capabilities.

The applications of the AT-32033-BLKG range from a variety of high-frequency applications, such as receivers, transceivers, and UPS systems. These transistors are also widely used in computers, laptops, and mobile phones for their excellent performance in amplifying high-frequency signals. Additionally, these transistors can also be used in automotive applications to support the safe operation of cars or other vehicles.

In summary, the AT-32033-BLKG is a high performance, reliable, and low-noise RF BJT. Its excellent range and high frequency capabilities, coupled with its low-distortion and voltage-handling abilities, make it a great choice for use in receivers, transceivers, and other high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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